|
|
PDF BUD42D Data sheet ( Hoja de datos )
| Número de pieza | BUD42D | |
| Descripción | High Speed/ High Gain Bipolar NPN Transistor with Antisaturation Network and Transient Voltage Suppression Capability | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de BUD42D (archivo pdf) en la parte inferior de esta página. Total 14 Páginas | ||
|
No Preview Available !
BUD42D
High Speed, High Gain
Bipolar NPN Transistor with
Antisaturation Network and
Transient Voltage
Suppression Capability
The BUD42D is a state−of−the−art bipolar transistor. Tight dynamic
characteristics and lot to lot minimum spread make it ideally suitable
for light ballast applications.
Main Features:
• Free Wheeling Diode Built In
• Flat DC Current Gain
• Fast Switching Times and Tight Distribution
• “6 Sigma” Process Providing Tight and Reproducible Parameter
Spreads
• Epoxy Meets UL94, VO @ 1/8”
• ESD Ratings: Machine Model, C; >400 V
Human Body Model, 3B; >8000 V
Two Versions:
• BUD42D−1: Case 369D for Insertion Mode
• BUD42D, BUD42DT4: Case 369C for Surface Mount Mode
MAXIMUM RATINGS
Rating
Symbol Value Unit
Collector−Emitter Sustaining Voltage
Collector−Base Breakdown Voltage
Collector−Emitter Breakdown Voltage
Emitter−Base Voltage
Collector Current − Continuous
− Peak (Note 1)
VCEO 350 Vdc
VCBO 650 Vdc
VCES 650 Vdc
VEBO 9 Vdc
IC 4.0 Adc
ICM 8.0
Base Current − Continuous
− Peak (Note 1)
*Total Device Dissipation @ TC = 25_C
*Derate above 25_C
IB 1.0 Adc
IBM 2.0
PD 25 Watt
0.2 W/_C
Operating and Storage Temperature
TJ, Tstg
−65 to
+150
_C
TYPICAL GAIN
Typical Gain @ IC = 1 A, VCE = 2 V
Typical Gain @ IC = 0.3 A, VCE = 1 V
THERMAL CHARACTERISTICS
hFE 13 −
hFE 16 −
Characteristic
Symbol Value Unit
Thermal Resistance − Junction−to−Case
Thermal Resistance − Junction−to−Ambient
Maximum Lead Temperature for Soldering
Purposes: 1/8″ from Case for 5 seconds
RθJC
RθJA
TL
5.0 °C/W
71.4 °C/W
260 °C
1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle = 10%
© Semiconductor Components Industries, LLC, 2003
August, 2003 − Rev. 2
1
http://onsemi.com
4 AMPERES
650 VOLTS
25 WATTS
POWER TRANSISTOR
4
12
3
DPAK
CASE 369C
Style 1
4
MARKING DIAGRAMS
4
Collector
Bas1e Coll2ector
3
Emmitter
4
Collector
1
2
3
DPAK
CASE 369D
Style 1
1 23
Base Collector Emmitter
Y = Year
WW = Work Week
BUD43D = Device Code
ORDERING INFORMATION
Device
Package
Shipping
BUD42D
BUD42D−1
BUD42DT4
DPAK
75 Units/Rail
DPAK
Straight Lead
75 Units/Rail
DPAK 2500 Tape & Reel
Publication Order Number:
BUD42D/D
1 page  
1000
100
10
1
1
BUD42D
TYPICAL SWITCHING CHARACTERISTICS
900
Cib
TJ = 25°C
f(test) = 1 MHz
800
700
ICER = 10 mA
10
VR, REVERSE VOLTAGE (VOLTS)
Figure 11. Capacitance
Cob
100
600
500
400
TC = 25°C
300
10
ICER = 100 mA
lC = 25 mH
100 1000
RBE (W)
Figure 12. BVCER = f(RBE)
10000
800
700
600
500
400
300
200
100
0
0
hFE = 5
hFE = 10
IBon = IBoff
VCC = 300 V
PW = 40 µs
TJ = 125°C
TJ = 25°C
0.5 1 1.5
IC, COLLECTOR CURRENT (AMPS)
Figure 13. Resistive Switching, ton
2
9
IBon = IBoff
VCC = 300 V
PW = 40 µs
6
hFE = 5
3
TJ = 125°C
TJ = 25°C
hFE = 10
0
0 0.5 1
1.5
IC, COLLECTOR CURRENT (AMPS)
2
Figure 14. Resistive Switching, toff
4
IBon = IBoff
VCE = 15 V
3 VZ = 300 V
LC = 200 µH
2
1
TJ = 125°C
TJ = 25°C
4
3
2
TJ = 125°C
TJ = 25°C
IBon = IBoff
VCE = 15 V
VZ = 300 V
LC = 200 µH
0
0 0.5 1 1.5 2
IC, COLLECTOR CURRENT (AMPS)
Figure 15. Inductive Storage Time,
tsi @ hFE = 5
1
0.5 1
1.5
IC, COLLECTOR CURRENT (AMPS)
Figure 16. Inductive Storage Time,
tsi @ hFE = 10
2
http://onsemi.com
5
5 Page 
BUD42D
200°C
STEP 1
PREHEAT
ZONE 1
RAMP"
STEP 2
VENT
SOAK"
STEP 3
HEATING
ZONES 2 & 5
RAMP"
STEP 4
STEP 5
HEATING HEATING
ZONES 3 & 6 ZONES 4 & 7
SOAK"
SPIKE"
DESIRED CURVE FOR HIGH
MASS ASSEMBLIES
160°C
170°C
STEP 6
VENT
STEP 7
COOLING
205° TO 219°C
PEAK AT
SOLDER JOINT
150°C
100°C
150°C
100°C
140°C
SOLDER IS LIQUID FOR
40 TO 80 SECONDS
(DEPENDING ON
MASS OF ASSEMBLY)
DESIRED CURVE FOR LOW
MASS ASSEMBLIES
50°C
TIME (3 TO 7 MINUTES TOTAL)
TMAX
Figure 32. Typical Solder Heating Profile
http://onsemi.com
11
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet BUD42D.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| BUD42D | High Speed/ High Gain Bipolar NPN Transistor with Antisaturation Network and Transient Voltage Suppression Capability | ON Semiconductor |
| BUD42DT4 | High Speed/ High Gain Bipolar NPN Transistor with Antisaturation Network and Transient Voltage Suppression Capability | ON Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |