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BUD42DT4 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 BUD42DT4
기능 High Speed/ High Gain Bipolar NPN Transistor with Antisaturation Network and Transient Voltage Suppression Capability
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BUD42DT4 데이터시트, 핀배열, 회로
BUD42D
High Speed, High Gain
Bipolar NPN Transistor with
Antisaturation Network and
Transient Voltage
Suppression Capability
The BUD42D is a state−of−the−art bipolar transistor. Tight dynamic
characteristics and lot to lot minimum spread make it ideally suitable
for light ballast applications.
Main Features:
Free Wheeling Diode Built In
Flat DC Current Gain
Fast Switching Times and Tight Distribution
“6 Sigma” Process Providing Tight and Reproducible Parameter
Spreads
Epoxy Meets UL94, VO @ 1/8”
ESD Ratings: Machine Model, C; >400 V
Human Body Model, 3B; >8000 V
Two Versions:
BUD42D−1: Case 369D for Insertion Mode
BUD42D, BUD42DT4: Case 369C for Surface Mount Mode
MAXIMUM RATINGS
Rating
Symbol Value Unit
Collector−Emitter Sustaining Voltage
Collector−Base Breakdown Voltage
Collector−Emitter Breakdown Voltage
Emitter−Base Voltage
Collector Current − Continuous
− Peak (Note 1)
VCEO 350 Vdc
VCBO 650 Vdc
VCES 650 Vdc
VEBO 9 Vdc
IC 4.0 Adc
ICM 8.0
Base Current − Continuous
− Peak (Note 1)
*Total Device Dissipation @ TC = 25_C
*Derate above 25_C
IB 1.0 Adc
IBM 2.0
PD 25 Watt
0.2 W/_C
Operating and Storage Temperature
TJ, Tstg
−65 to
+150
_C
TYPICAL GAIN
Typical Gain @ IC = 1 A, VCE = 2 V
Typical Gain @ IC = 0.3 A, VCE = 1 V
THERMAL CHARACTERISTICS
hFE 13 −
hFE 16 −
Characteristic
Symbol Value Unit
Thermal Resistance − Junction−to−Case
Thermal Resistance − Junction−to−Ambient
Maximum Lead Temperature for Soldering
Purposes: 1/8from Case for 5 seconds
RθJC
RθJA
TL
5.0 °C/W
71.4 °C/W
260 °C
1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle = 10%
© Semiconductor Components Industries, LLC, 2003
August, 2003 − Rev. 2
1
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4 AMPERES
650 VOLTS
25 WATTS
POWER TRANSISTOR
4
12
3
DPAK
CASE 369C
Style 1
4
MARKING DIAGRAMS
4
Collector
Bas1e Coll2ector
3
Emmitter
4
Collector
1
2
3
DPAK
CASE 369D
Style 1
1 23
Base Collector Emmitter
Y = Year
WW = Work Week
BUD43D = Device Code
ORDERING INFORMATION
Device
Package
Shipping
BUD42D
BUD42D−1
BUD42DT4
DPAK
75 Units/Rail
DPAK
Straight Lead
75 Units/Rail
DPAK 2500 Tape & Reel
Publication Order Number:
BUD42D/D




BUD42DT4 pdf, 반도체, 판매, 대치품
10
IC/IB = 5
BUD42D
TYPICAL STATIC CHARACTERISTICS
10
IC/IB = 8
1 TJ = −20°C
TJ = 125°C
TJ = 25°C
0.1
0.001
0.01 0.1
1
IC, COLLECTOR CURRENT (AMPS)
10
Figure 7. Base−Emitter Saturation Region
1 TJ = −20°C
TJ = 125°C
TJ = 25°C
0.1
0.001
0.01 0.1
1
IC, COLLECTOR CURRENT (AMPS)
10
Figure 8. Base−Emitter Saturation Region
10
IC/IB = 10
10
1 TJ = −20°C
TJ = 125°C
TJ = 25°C
0.1
0.001
0.01 0.1
1
IC, COLLECTOR CURRENT (AMPS)
Figure 9. Base−Emitter Saturation Region
10
1 VEC(V) = −20°C
VEC(V) = 125°C
VEC(V) = 25°C
0.1
0.01
0.1 1
REVERSE EMITTER−COLLECTOR CURRENT
Figure 10. Forward Diode Voltage
10
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BUD42DT4 전자부품, 판매, 대치품
BUD42D
TYPICAL SWITCHING CHARACTERISTICS
3
IBon = IBoff
VCC = 15 V
2.5
VZ = 300 V
LC = 200 µH
2
1.5
IB 1 & 2 = 200 mA
50 mA
500 mA
100 mA
1
0 0.5 1 1.5 2
IC, COLLECTOR CURRENT (AMPS)
Figure 23. Inductive Storage Time, tsi
440
420
400
380
360
340
320
300
0
di/dt = 10 A/ms, TC = 25°C
0.5 1
1.5
IF, FORWARD CURRENT (AMPS)
Figure 24. Forward Recovery Time, tfr
2
VCE
Dyn 1 ms
Dyn 3 ms
0V
90% IB
1 ms
IB 3 ms
TIME
Figure 25. Dynamic Saturation Voltage
Measurements
10
IC
8
6
Vclamp
4
IB
2
90% IC
tsi
tfi
10% Vclamp
10% IC
90% IB1
tc
0
02 46
TIME
8
Figure 26. Inductive Switching Measurements
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BUD42DT4

High Speed/ High Gain Bipolar NPN Transistor with Antisaturation Network and Transient Voltage Suppression Capability

ON Semiconductor
ON Semiconductor

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