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부품번호 BUD44D2
기능 POWER TRANSISTORS 2 AMPERES 700 VOLTS 25 WATTS
제조업체 Motorola Inc
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BUD44D2 데이터시트, 핀배열, 회로
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BUD44D2/D
Advance Information
High Speed, High Gain Bipolar
NPN Power Transistor with
Integrated Collector-Emitter
Diode and Built-in Efficient
Antisaturation Network
The BUD44D2 is state–of–art High Speed High gain BIPolar transistor (H2BIP).
High dynamic characteristics and lot to lot minimum spread (±150 ns on storage time)
make it ideally suitable for light ballast applications. Therefore, there is no need to
guarantee an hFE window.
Main features:
Low Base Drive Requirement
High Peak DC Current Gain (55 Typical) @ IC = 100 mA
Extremely Low Storage Time Min/Max Guarantees Due to the
H2BIP Structure which Minimizes the Spread
Integrated Collector–Emitter Free Wheeling Diode
Fully Characterized and Guaranteed Dynamic VCE(sat)
“6 Sigma” Process Providing Tight and Reproductible Parameter Spreads
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎIt’s characteristics make it also suitable for PFC application.
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
Symbol
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Sustaining Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Base Breakdown Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Breakdown Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current — Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΗ Peak(1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current — Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current — Peak (1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ*Total Device Dissipation @ TC = 25_C
*Derate above 25°C
VCEO
VCBO
VCES
VEBO
IC
ICM
IB
IBM
PD
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Temperature
TJ, Tstg
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance
— Junction to Case
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΗ Junction to Ambient
RθJC
RθJA
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMaximum Lead Temperature for Soldering
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎPurposes: 1/8from case for 5 seconds
TL
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%.
Value
400
700
700
12
2
5
1
2
25
0.2
– 65 to 150
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Adc
Watt
W/_C
_C
_C/W
5
71.4
260 _C
BUD44D2
POWER TRANSISTORS
2 AMPERES
700 VOLTS
25 WATTS
CASE 369–07
CASE 369A–13
MINIMUM PAD SIZES
RECOMMENDED FOR
SURFACE MOUNTED
APPLICATIONS
6.7
0.265
1.6
0.063
2.3 2.3
0.090 0.090
1.6
0.063
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
This document contains information on a new product. Specifications and information herein are subject to change without notice.
©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data
1




BUD44D2 pdf, 반도체, 판매, 대치품
BUD44D2
100
VCE = 1 V
80
TJ = 125°C
60 TJ = 25°C
40 TJ = – 20°C
20
TYPICAL STATIC CHARACTERISTICS
100
VCE = 5 V
80
TJ = 125°C
60 TJ = 25°C
40 TJ = – 20°C
20
0
0.001
0.01 0.1
1
IC, COLLECTOR CURRENT (AMPS)
Figure 1. DC Current Gain @ 1 Volt
10
0
0.001
0.01 0.1
1
IC, COLLECTOR CURRENT (AMPS)
Figure 2. DC Current Gain @ 5 Volt
10
4
TJ = 25°C
3 2A
1.5 A
1A
2
400 mA
1
IC = 200 mA
0
1
10 100
IB, BASE CURRENT (mA)
Figure 3. Collector Saturation Region
1000
10
IC/IB = 5
1
TJ = 25°C
TJ = 125°C
TJ = – 20°C
0.1
0.001
0.01 0.1
1
IC, COLLECTOR CURRENT (AMPS)
10
Figure 4. Collector–Emitter Saturation Voltage
10
IC/IB = 10
10
IC/IB = 20
TJ = 25°C
1
TJ = 125°C TJ = – 20°C
0.1
0.001
0.01 0.1
1
IC, COLLECTOR CURRENT (AMPS)
10
Figure 5. Collector–Emitter Saturation Voltage
TJ = 25°C
1
TJ = 125°C
TJ = – 20°C
0.1
0.001
0.01 0.1
IC, COLLECTOR CURRENT (AMPS)
1
Figure 6. Collector–Emitter Saturation Voltage
4 Motorola Bipolar Power Transistor Device Data

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BUD44D2 전자부품, 판매, 대치품
TYPICAL SWITCHING CHARACTERISTICS
BUD44D2
700
IBoff = IBon
600 VCC = 15 V
VZ = 300 V
500 LC = 200 µH
400
TJ = 125°C
TJ = 25°C
IC = 0.3 A
300
200
100
IC = 1 A
0
3 5 7 9 11 13 15
hFE, FORCED GAIN
Figure 15. Inductive Fall Time
1000
IBon = IBoff
VCC = 15 V
800 VZ = 300 V
LC = 200 µH
600
TJ = 125°C
TJ = 25°C
IC = 1 A
400
200
IC = 0.3 A
0
3 6 9 12 15
hFE, FORCED GAIN
Figure 16. Inductive Crossover Time
900
800
700
600
500
400
300
200
100
0
0.4
TJ = 125°C
TJ = 25°C
IC/IB = 20
IC/IB = 10
IBon = IBoff VZ = 300 V
VCC = 15 V LC = 200 µH
0.8 1.2 1.6
IC, COLLECTOR CURRENT (AMPS)
2
Figure 17. Inductive Switching, tfi
2000
IBoff = IC/2
VCC = 15 V
1500
VZ = 300 V
LC = 200 µH
1000
TJ = 125°C
TJ = 25°C
IC/IB = 20
500
0
0.4
IC/IB = 10
0.8 1.2 1.6
IC, COLLECTOR CURRENT (AMPS)
Figure 18. Inductive Switching, tc
2
3000
IC/IB = 5
2000
IBon = IBoff
VCC = 15 V
VZ = 300 V
LC = 200 µH
1000
0
0
IB = 50 mA
IB = 100 mA
IB = 200 mA
IB = 500 mA
0.5 1 1.5 2 2.5
IC, COLLECTOR CURRENT (AMPS)
Figure 19. Inductive Storage Time, tsi
3
3000
IBon = IBoff
VCC = 15 V
2500 VZ = 300 V
LC = 200 µH
2000
1500
1000
500
0
IC/IB = 20
TJ = 125°C
TJ = 25°C
IC/IB = 10
0.5 1
1.5
IC, COLLECTOR CURRENT (AMPS)
Figure 20. Inductive Storage Time, tsi
2
Motorola Bipolar Power Transistor Device Data
7

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BUD44D2

POWER TRANSISTORS 2 AMPERES 700 VOLTS 25 WATTS

Motorola  Inc
Motorola Inc

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