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PDF BUH100 Data sheet ( Hoja de datos )
| Número de pieza | BUH100 | |
| Descripción | POWER TRANSISTOR 10 AMPERES 700 VOLTS 100 WATTS | |
| Fabricantes | Motorola Inc | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BUH100 (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
™Designer's Data Sheet
SWITCHMODE NPN Silicon
Planar Power Transistor
The BUH100 has an application specific state–of–art die designed for use in
100 Watts Halogen electronic transformers.
This power transistor is specifically designed to sustain the large inrush current
during either the start–up conditions or under a short circuit across the load.
This High voltage/High speed product exhibits the following main features:
• Improved Efficiency Due to the Low Base Drive Requirements:
— High and Flat DC Current Gain hFE
— Fast Switching
• Robustness Thanks to the Technology Developed to Manufacture
this Device
• Motorola “6 SIGMA” Philosophy Provides Tight and Reproducible
Parametric Distributions
Order this document
by BUH100/D
BUH100
POWER TRANSISTOR
10 AMPERES
700 VOLTS
100 WATTS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS
Rating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Sustaining Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Base Breakdown Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Breakdown Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current — Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΗ Peak(1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current — Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current — Peak (1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ*Total Device Dissipation @ TC = 25_C
*Derate above 25°C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Temperature
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
Thermal Resistance
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΗ Junction to Case
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΗ Junction to Ambient
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMaximum Lead Temperature for Soldering Purposes:
1/8″ from case for 5 seconds
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle≤10%.
Symbol
VCEO
VCBO
VCES
VEBO
IC
ICM
IB
IBM
PD
TJ, Tstg
RθJC
RθJA
TL
CASE 221A–06
TO–220AB
Value
400
700
700
10
10
20
4
10
100
0.8
– 65 to 150
1.25
62.5
260
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Adc
Watt
W/_C
_C
_C/W
_C
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data
1
1 page  
TYPICAL STATIC CHARACTERISTICS
BUH100
1.5
IC/IB = 10
1
TJ = – 20°C
TJ = 25°C
0.5
TJ = 125°C
0
0.001
0.01 0.1
1
IC, COLLECTOR CURRENT (AMPS)
10
Figure 7. Base–Emitter Saturation Region
2
TJ = 25°C
1.5
15 A
10 A
8A
5A
1
3A
0.5
VCE(sat)
(IC = 1 A)
0
0.01
2A
0.1 1
IB, BASE CURRENT (A)
Figure 8. Collector Saturation Region
10
10000
1000
900
TJ = 25°C
Cib
f(test) = 1 MHz
800 BVCER @ 10 mA
700
TJ = 25°C
100
10
1
Cob
10
VR, REVERSE VOLTAGE (VOLTS)
Figure 9. Capacitance
600
500
BVCER(sus) @ 500 mA, 25 mH
400
100 10
100
1000
10000
100000
RBE (Ω)
Figure 10. Resistive Breakdown
Motorola Bipolar Power Transistor Device Data
5
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet BUH100.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| BUH100 | POWER TRANSISTOR 10 AMPERES 700 VOLTS 100 WATTS | Motorola Inc |
| BUH100 | POWER TRANSISTOR 10 AMPERES 700 VOLTS 100 WATTS |  ON Semiconductor |
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