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Número de pieza | BUH50 | |
Descripción | POWER TRANSISTOR 4 AMPERES 800 VOLTS 50 WATTS | |
Fabricantes | Motorola Inc | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BUH50 (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
No Preview Available ! MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
™Designer's Data Sheet
SWITCHMODE NPN Silicon
Planar Power Transistor
The BUH50 has an application specific state–of–art die designed for use in
50 Watts HALOGEN electronic transformers and switchmode applications.
This high voltage/high speed transistor exhibits the following main feature:
• Improved Efficiency Due to Low Base Drive Requirements:
— High and Flat DC Current Gain hFE
— Fast Switching
• Motorola “6SIGMA” Philosophy Provides Tight and Reproductible
Parametric Distributions
• Specified Dynamic Saturation Data
• Full Characterization at 125°C
Order this document
by BUH50/D
BUH50
POWER TRANSISTOR
4 AMPERES
800 VOLTS
50 WATTS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS
Rating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Sustaining Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Base Breakdown Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Breakdown Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current — Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΗ Peak(1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current — Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current — Peak (1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ*Total Device Dissipation @ TC = 25_C
*Derate above 25°C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Temperature
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
Thermal Resistance
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΗ Junction to Case
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΗ Junction to Ambient
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMaximum Lead Temperature for Soldering Purposes:
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ1/8″ from case for 5 seconds
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
Symbol
VCEO
VCBO
VCES
VEBO
IC
ICM
IB
IBM
PD
TJ, Tstg
RθJC
RθJA
TL
CASE 221A–06
TO–220AB
Value
500
800
800
9
4
8
2
4
50
0.4
– 65 to 150
2.5
62.5
260
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Adc
Watt
W/_C
_C
_C/W
_C
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data
1
1 page 3000
2500
2000
1500
1000
500
0
1
TYPICAL SWITCHING CHARACTERISTICS
BUH50
TJ = 125°C
TJ = 25°C
IBoff = IC/2
VCC = 125 V
PW = 20 µs
4000
TJ = 125°C
TJ = 25°C
IBoff = IC/2
VCC = 125 V
3000 PW = 20 µs
IC/IB = 5
2000
IC/IB = 3
1000
IC/IB = 3
2 34
IC, COLLECTOR CURRENT (AMPS)
Figure 9. Resistive Switching, ton
5
IC/IB = 5
0
123 4
IC, COLLECTOR CURRENT (AMPS)
5
Figure 10. Resistive Switch Time, toff
4000
IBoff = IC/2
VCC = 15 V
3000
IC/IB = 3
VZ = 300 V
LC = 200 µH
2000
1000
0
1
TJ = 125°C
TJ = 25°C
IC/IB = 5
23
IC, COLLECTOR CURRENT (AMPS)
Figure 11. Inductive Storage Time, tsi
4
300
200
100
0
1
IBoff = IC/2
VCC = 15 V
VZ = 300 V
LC = 200 µH
tc
tfi TJ = 125°C
TJ = 25°C
23
IC, COLLECTOR CURRENT (AMPS)
4
Figure 12. Inductive Storage Time,
tc & tfi @ IC/IB = 3
TYPICAL CHARACTERISTICS
250
tc
TJ = 125°C
TJ = 25°C
200
150
100
IBoff = IC/2
50 VCC = 15 V
VZ = 300 V
0 LC = 200 µH
12
tfi
3
IC, COLLECTOR CURRENT (AMPS)
4
Figure 13. Inductive Switching, tc & tfi @ IC/IB = 5
4000
TJ = 125°C
TJ = 25°C
3000
IC = 1 A
2000
IBoff = IC/2
VCC = 15 V
VZ = 300 V
LC = 200 µH
1000
0
3
IC = 2 A
45 6 789
hFE, FORCED GAIN
Figure 14. Inductive Storage Time
10
Motorola Bipolar Power Transistor Device Data
5
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet BUH50.PDF ] |
Número de pieza | Descripción | Fabricantes |
BUH50 | POWER TRANSISTOR 4 AMPERES 800 VOLTS 50 WATTS | Motorola Inc |
BUH50 | POWER TRANSISTOR 4 AMPERES 800 VOLTS 50 WATTS | ON Semiconductor |
BUH51 | POWER TRANSISTOR 3 AMPERES 800 VOLTS 50 WATTS | Motorola Inc |
BUH51 | POWER TRANSISTOR 3 AMPERES 800 VOLTS 50 WATTS | ON Semiconductor |
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