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부품번호 | BUH50 기능 |
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기능 | POWER TRANSISTOR 4 AMPERES 800 VOLTS 50 WATTS | ||
제조업체 | ON Semiconductor | ||
로고 | |||
전체 10 페이지수
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
™Designer's Data Sheet
SWITCHMODE NPN Silicon
Planar Power Transistor
The BUH50 has an application specific state–of–art die designed for use in
50 Watts HALOGEN electronic transformers and switchmode applications.
This high voltage/high speed transistor exhibits the following main feature:
• Improved Efficiency Due to Low Base Drive Requirements:
— High and Flat DC Current Gain hFE
— Fast Switching
• Motorola “6SIGMA” Philosophy Provides Tight and Reproductible
Parametric Distributions
• Specified Dynamic Saturation Data
• Full Characterization at 125°C
Order this document
by BUH50/D
BUH50
POWER TRANSISTOR
4 AMPERES
800 VOLTS
50 WATTS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS
Rating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Sustaining Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Base Breakdown Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Breakdown Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current — Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΗ Peak(1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current — Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current — Peak (1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ*Total Device Dissipation @ TC = 25_C
*Derate above 25°C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Temperature
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
Thermal Resistance
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΗ Junction to Case
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΗ Junction to Ambient
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMaximum Lead Temperature for Soldering Purposes:
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ1/8″ from case for 5 seconds
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
Symbol
VCEO
VCBO
VCES
VEBO
IC
ICM
IB
IBM
PD
TJ, Tstg
RθJC
RθJA
TL
CASE 221A–06
TO–220AB
Value
500
800
800
9
4
8
2
4
50
0.4
– 65 to 150
2.5
62.5
260
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Adc
Watt
W/_C
_C
_C/W
_C
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data
1
BUH50
10
TYPICAL STATIC CHARACTERISTICS
TJ = 25°C
10
IC/IB = 3
4A
3A
1 2A
1A
IC = 500 mA
0.1
0.01
0.1 1
IB, BASE CURRENT (mA)
Figure 3. Collector Saturation Region
10
1
TJ = – 40°C
0.1
TJ = 125°C
TJ = 25°C
0.01
0.01
0.1 1
IC, COLLECTOR CURRENT (AMPS)
10
Figure 4. Collector–Emitter Saturation Voltage
10
IC/IB = 5
1
TJ = – 40°C
0.1
TJ = 125°C
TJ = 25°C
0.01
0.01
0.1 1
IC, COLLECTOR CURRENT (AMPS)
10
Figure 5. Collector–Emitter Saturation Voltage
10
IC/IB = 3
1 TJ = 125°C
TJ = – 40°C
TJ = 25°C
0.1
0.01
0.1 1
IC, COLLECTOR CURRENT (AMPS)
10
Figure 6. Base–Emitter Saturation Region
10
IC/IB = 5
1 TJ = 125°C
TJ = 25°C
TJ = – 40°C
0.1
0.01
0.1 1
IC, COLLECTOR CURRENT (AMPS)
10
Figure 7. Base–Emitter Saturation Region
10000
1000
100
10
1
1
Cib (pF)
TJ = 25°C
f(test) = 1 MHz
Cob (pF)
10
VR, REVERSE VOLTAGE (VOLTS)
Figure 8. Capacitance
100
4 Motorola Bipolar Power Transistor Device Data
4페이지 TYPICAL CHARACTERISTICS
BUH50
VCE
dyn 1 µs
0V
dyn 3 µs
90% IB
1 µs
IB 3 µs
TIME
Figure 18. Dynamic Saturation Voltage
10
9 IC
8
7
6
5 Vclamp
4
3 IB
2
1
0
01
tsi
10% Vclamp
90% IB1
2 34
TIME
90% IC
tfi
10% IC
tc
56 78
Figure 19. Inductive Switching Measurements
10
1 µs
10 µs
1 ms
5 ms
1
EXTENDED
SOA
DC
0.1
0.01
10
100
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
1000
Figure 20. Forward Bias Safe Operating Area
5
GAIN ≥ 3
TC ≤ 125°C
LC = 500 µH
4
3
2
1 –5 V
0 V –1.5 V
0
300 600
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
900
Figure 21. Reverse Bias Safe Operating Area
Motorola Bipolar Power Transistor Device Data
7
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부품번호 | 상세설명 및 기능 | 제조사 |
BUH50 | POWER TRANSISTOR 4 AMPERES 800 VOLTS 50 WATTS | Motorola Inc |
BUH50 | POWER TRANSISTOR 4 AMPERES 800 VOLTS 50 WATTS | ON Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |