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PDF BUH51 Data sheet ( Hoja de datos )
| Número de pieza | BUH51 | |
| Descripción | POWER TRANSISTOR 3 AMPERES 800 VOLTS 50 WATTS | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BUH51 (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Advance Information
SWITCHMODE NPN Silicon
Planar Power Transistor
The BUH51 has an application specific state–of–art die designed for use in
50 Watts Halogen electronic transformers.
This power transistor is specifically designed to sustain the large inrush current
during either the start–up conditions or under a short circuit across the load.
This High voltage/High speed product exhibits the following main features:
• Improved Efficiency Due to the Low Base Drive Requirements:
— High and Flat DC Current Gain hFE
— Fast Switching
• Robustness Thanks to the Technology Developed to Manufacture
this Device
• Motorola “6 SIGMA” Philosophy Providing Tight and Reproducible
Parametric Distributions
Order this document
by BUH51/D
BUH51
POWER TRANSISTOR
3 AMPERES
800 VOLTS
50 WATTS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS
Rating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Sustaining Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Base Breakdown Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Breakdown Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current — Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΗ Peak(1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current — Continuous
Base Current — Peak (1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ*Total Device Dissipation @ TC = 25_C
*Derate above 25°C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Temperature
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΗ Junction to Case
— Junction to Ambient
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMaximum Lead TemperatureforSolderingPurposes:
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ1/8″ from case for 5 seconds
Symbol
VCEO
VCBO
VCES
VEBO
IC
ICM
IB
IBM
PD
TJ, Tstg
RθJC
RθJA
TL
CASE 77–07
TO–225AA TYPE
Value
500
800
800
10
3
8
2
4
50
0.4
– 65 to 150
2.5
100
260
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Adc
Watt
W/_C
_C
_C/W
_C
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
This document contains information on a new product. Specifications and information herein are subject to change without notice.
©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data
1
1 page  
1000
100
10
1
TYPICAL STATIC CHARACTERISTICS
BUH51
TJ = 25°C
f(test) = 1 MHz
1000
900
Cib
800
TJ = 25°C
Cob
10
VR, REVERSE VOLTAGE (VOLTS)
Figure 9. Capacitance
700
600 BVCER @ 10 mA
500 BVCER(sus) @ 200 mA, 25 mH
400
100 10
100
1000
10000
100000
RBE (Ω)
Figure 10. Resistive Breakdown
2500
IB1 = IB2
2000
VCC = 300 V
PW = 40 µs
1500
TYPICAL SWITCHING CHARACTERISTICS
10
IC/IB = 5
8
6
IC/IB = 5
IB1 = IB2
VCC = 300 V
PW = 40 µs
1000 4
500
0
0
TJ = 125°C
TJ = 25°C
12
IC, COLLECTOR CURRENT (AMPS)
3
Figure 11. Resistive Switching, ton
2 TJ = 125°C
TJ = 25°C
0
012
IC, COLLECTOR CURRENT (AMPS)
3
Figure 12. Resistive Switch Time, toff
7
IB1 = IB2
IC/IB = 5
VCC = 15 V
VZ = 300 V
LC = 200 µH
5
3
TJ = 125°C
TJ = 25°C
1
01
2
IC, COLLECTOR CURRENT (AMPS)
3
Figure 13. Inductive Storage Time, tsi
Motorola Bipolar Power Transistor Device Data
4
IC/IB = 10
IB1 = IB2
VCC = 15 V
3
VZ = 300 V
LC = 200 µH
2
1
TJ = 125°C
TJ = 25°C
0
0.5 1
1.5
IC, COLLECTOR CURRENT (AMPS)
Figure 13 Bis. Inductive Storage Time, tsi
2
5
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet BUH51.PDF ] | |
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