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PDF BUJ100AT Data sheet ( Hoja de datos )
| Número de pieza | BUJ100AT | |
| Descripción | Silicon Diffused Power Transistor | |
| Fabricantes | NXP Semiconductors | |
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Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BUJ100AT
GENERAL DESCRIPTION
High-voltage, high-speed planar-passivated npn power switching transistor in the SOT223 envelope intended for
use in compact fluorescent lamps, low power electronic lighting ballasts and similar high frequency converters and
inverters.
QUICK REFERENCE DATA
SYMBOL
VCESM
VCBO
VCEO
IC
ICM
Ptot
VCEsat
hFE
tfi
PARAMETER
Collector-emitter voltage peak value
Collector-Base voltage (open emitter)
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Fall time (Inductive)
CONDITIONS
VBE = 0 V
Tsp ≤ 25 ˚C
IC = 0.75 A;IB = 150 mA
IC = 0.75 A;VCE = 5 V
IC = 1.0 A,IBON=200 mA
TYP.
-
-
-
-
-
-
0.23
14
50
MAX.
700
700
400
1.0
2.0
6
1.0
20
70
UNIT
V
V
V
A
A
W
V
ns
PINNING - SOT223
PIN DESCRIPTION
1 base
2 collector
3 emitter
4 collector (tab)
PIN CONFIGURATION
4
123
SYMBOL
c
b
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VCESM
VCEO
VCBO
IC
ICM
IB
IBM
Ptot
Tstg
Tj
Collector to emitter voltage
Collector to emitter voltage (open base)
Collector to base voltage (open emitter)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Total power dissipation
Storage temperature
Junction temperature
VBE = 0 V
Tsp ≤ 25 ˚C
MIN.
-
-
-
-
-
-
-
-
-65
-
MAX.
700
400
700
1.0
2.0
0.5
1.0
6
150
150
UNIT
V
V
V
A
A
A
A
W
˚C
˚C
THERMAL RESISTANCES
SYMBOL
Rth j-sp
Rth j-a
PARAMETER
Junction to solder point
Junction to ambient
CONDITIONS
pcb mounted pad areas as in Fig.
23)
pcb mounted, minimum footprint
Mounted on 50x34x2mm
aluminium PCB
TYP.
-
70
30
MAX.
20
-
-
UNIT
K/W
K/W
K/W
September 1999
1
Rev 1.000
1 page  
Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BUJ100AT
tsi (us)
1.25
1
0.75
IC = 2A
IC = 1.5A
0.5
IC = 1A
0.25
0
2 4 6 8 10 11
HFE GAIN (IC/IB)
Fig.13. Inductive switching.
tsi = f(hFE)
tsi (us)
1.25
1
0.75 IC/IB = 3
0.5
0.25
IC/IB = 5
IC/IB = 10
0
0.8 1 1.2 1.4 1.6 1.8 2 2.2
IC COLLECTOR CURRENT /A
Fig.14. Inductive switching.
tsi = f(IC)
RESISTIVE SWITCHING
VCC
90 %
ICon
90 %
VIM
0
tp
T
RB
RL
T.U.T.
Fig.15. Test circuit resistive load. VIM = -6 to +8 V
VCC = 250 V; tp = 20 µs; δ = tp / T = 0.01.
RB and RL calculated from ICon and IBon requirements.
IC
ton
IB
10 %
tr 30ns
10 %
ts
tf
toff
IBon
-IBoff
Fig.16. Switching times waveforms with resistive load.
ton (us)
2
1.5
IC/IB = 10
1 IC/IB = 5
0.5
IC/IB = 3
0
0 0.5 1 1.5 2
IC COLLECTOR CURRENT (A)
Fig.17. Resistive switching.
ton = f(IC)
ts (us)
3
2.5
2
1.5
1
0.5
0
0
IC/IB = 5
IC/IB = 3
IC/IB = 10
0.5 1 1.5
IC COLLECTOR CURRENT (A)
2
Fig.18. Resistive switching.
ts = f(IC)
2.5
September 1999
5
Rev 1.000
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet BUJ100AT.PDF ] | |
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