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PDF BUJ101AU Data sheet ( Hoja de datos )
| Número de pieza | BUJ101AU | |
| Descripción | Silicon Diffused Power Transistor | |
| Fabricantes | NXP Semiconductors | |
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Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BUJ101AU
GENERAL DESCRIPTION
High-voltage, high-speed planar-passivated npn power switching transistor in the I-PAK / SOT533 envelope
intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc.
QUICK REFERENCE DATA
SYMBOL
VCESM
VCBO
VCEO
IC
ICM
Ptot
VCEsat
hFE
tfi
PARAMETER
Collector-emitter voltage peak value
Collector-Base voltage (open emitter)
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Fall time (Inductive)
CONDITIONS
VBE = 0 V
Tmb ≤ 25 ˚C
IC = 1.0A;IB = 200 mA
IC = 1.0A;VCE = 5 V
IC = 1.0A,IBON = 200mA
TYP.
-
-
-
-
-
-
0.32
11
50
MAX.
700
700
400
1.5
3
50
1.0
14
70
UNIT
V
V
V
A
A
W
V
ns
PINNING - SOT533
PIN DESCRIPTION
1 base
2 collector
3 emitter
tab collector
PIN CONFIGURATION
123
Top view
MBK915
SYMBOL
c
b
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VCESM
VCEO
VCBO
IC
ICM
IB
IBM
Ptot
Tstg
Tj
Collector to emitter voltage
Collector to emitter voltage (open base)
Collector to base voltage (open emitter)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Total power dissipation
Storage temperature
Junction temperature
VBE = 0 V
Tmb ≤ 25 ˚C
THERMAL RESISTANCES
SYMBOL
Rth j-mb
Rth j-a
PARAMETER
Junction to mounting base
Junction to ambient
CONDITIONS
in free air
MIN.
-
-
-
-
-
-
-
-
-65
-
MAX.
700
400
700
1.5
3
0.75
1.5
50
150
150
UNIT
V
V
V
A
A
A
A
W
˚C
˚C
TYP.
-
70
MAX.
2.5
-
UNIT
K/W
K/W
September 1999
1
Rev 1.000
1 page  
Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BUJ101AU
tsi (us)
1.25
1
0.75
IC = 2A
IC = 1.5A
0.5
IC = 1A
0.25
0
2 4 6 8 10 11
HFE GAIN (IC/IB)
Fig.13. Inductive switching.
tsi = f(hFE)
tsi (us)
1.25
1
0.75 IC/IB = 3
0.5
0.25
IC/IB = 5
IC/IB = 10
0
0.8 1 1.2 1.4 1.6 1.8 2 2.2
IC COLLECTOR CURRENT /A
Fig.14. Inductive switching.
tsi = f(IC)
RESISTIVE SWITCHING
VCC
90 %
ICon
90 %
VIM
0
tp
T
RB
RL
T.U.T.
Fig.15. Test circuit resistive load. VIM = -6 to +8 V
VCC = 250 V; tp = 20 µs; δ = tp / T = 0.01.
RB and RL calculated from ICon and IBon requirements.
IC
ton
IB
10 %
tr 30ns
10 %
ts
tf
toff
IBon
-IBoff
Fig.16. Switching times waveforms with resistive load.
ton (us)
2
1.5
IC/IB = 10
1 IC/IB = 5
0.5
IC/IB = 3
0
0 0.5 1 1.5 2
IC COLLECTOR CURRENT (A)
Fig.17. Resistive switching.
ton = f(IC)
ts (us)
3
2.5
2
1.5
1
0.5
0
0
IC/IB = 5
IC/IB = 3
IC/IB = 10
0.5 1 1.5
IC COLLECTOR CURRENT (A)
2
Fig.18. Resistive switching.
ts = f(IC)
2.5
September 1999
5
Rev 1.000
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet BUJ101AU.PDF ] | |
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