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PDF BUJ103 Data sheet ( Hoja de datos )
| Número de pieza | BUJ103 | |
| Descripción | Silicon Diffused Power Transistor | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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DISCRETE SEMICONDUCTORS
DATA SHEET
BUJ103A
Silicon Diffused Power Transistor
Product specification
August 1998
1 page  
Philips Semiconductors
Silicon Diffused Power Transistor
120 PD%
Normalised Power Derating
110
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Tmb / C
Fig.7. Normalised power dissipation.
PD% = 100⋅PD/PD 25˚C = f (Tmb)
h FE
100
5V
10
Tj = 25 C
1V
1
0.01
Fig.8.
0.1
IC / A
1
10
Typical DC current gain. hFE = f(IC)
parameter VCE
VCEsat/V
2.0
1.6
IC=1A 2A 3A 4A
1.2
0.8
0.4
0.0
0.01
0.10 1.00
IB/A
10.00
Fig.9. Collector-Emitter saturation voltage.
Solid lines = typ values, VCEsat = f(IB); Tj=25˚C.
Product specification
BUJ103A
VBEsat/V
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.1 1 10
IC/A
Fig.10. Base-Emitter saturation voltage.
Solid lines = typ values, VBEsat = f(IC); at IC/IB =4.
VCEsat/V
0.5
0.4
0.3
0.2
0.1
0.0
0.1 1 10
IC/A
Fig.11. Collector-Emitter saturation voltage.
Solid lines = typ values, VCEsat = f(IC); at IC/IB =4.
Zth / (K/W)
10
1
D= 0.5
0.2
0.1
0.1 0.05
0.02
0
PD t p
tp
D= T
Tt
0.01
1E-06
1E-04
1E-02
t/s
1E+00
Fig.12. Transient thermal impedance.
Zth j-mb = f(t); parameter D = tp/T
August 1998
4
Rev 1.000
5 Page 
Philips Semiconductors
Silicon Diffused Power Transistor
NOTES
Product specification
BUJ103A
August 1998
10
Rev 1.000
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet BUJ103.PDF ] | |
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