|
|
PDF BUJ304A Data sheet ( Hoja de datos )
| Número de pieza | BUJ304A | |
| Descripción | Silicon Diffused Power Transistor | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de BUJ304A (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
|
No Preview Available !
Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BUJ304A
GENERAL DESCRIPTION
High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use
in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control
systems, etc.
QUICK REFERENCE DATA
SYMBOL
VCESM
VCBO
VCEO
IC
ICM
Ptot
VCEsat
hFESAT
tf
PARAMETER
Collector-emitter voltage peak value
Collector-Base voltage (open emitter)
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Fall time (Inductive)
CONDITIONS
VBE = 0 V
Tmb ≤ 25 ˚C
IC = 4.0 A;IB = 0.8 A
IC = 4.0 A; VCE = 5 V
IC = 5.0 A; IB1 = 1.0 A
TYP.
-
-
-
-
-
-
0.3
11
25
MAX.
1000
1000
500
6
10
100
1.0
15
50
UNIT
V
V
V
A
A
W
V
ns
PINNING - TO220AB
PIN DESCRIPTION
1 base
2 collector
3 emitter
tab collector
PIN CONFIGURATION
tab
1 23
SYMBOL
c
b
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VCESM
VCEO
VCBO
IC
ICM
IB
IBM
Ptot
Tstg
Tj
Collector to emitter voltage
Collector to emitter voltage (open base)
Collector to base voltage (open emitter)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Total power dissipation
Storage temperature
Junction temperature
VBE = 0 V
Tmb ≤ 25 ˚C
THERMAL RESISTANCES
SYMBOL
Rth j-mb
Rth j-a
PARAMETER
Junction to mounting base
Junction to ambient
CONDITIONS
in free air
MIN.
-
-
-
-
-
-
-
-
-65
-
MAX.
1000
500
1000
6
10
3
6
100
150
150
UNIT
V
V
V
A
A
A
A
W
˚C
˚C
TYP.
-
60
MAX.
1.25
-
UNIT
K/W
K/W
March 1999
1
Rev 1.000
1 page  
Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BUJ304A
IC/A
11
10
9
8
7
6
5
-5V
4
-3V
3
2 -1V
1
0
300
400
500
600
700
800
VCE clamp (V)
900 1,000 1,100
Fig.13. Reverse bias safe operating area (Tj < Tjmax)
for -Vbe = 5V,3V & 1V
VCC
LC
IBon LB
VCL(RBSOAR)
PROBE POINT
-VBB T.U.T.
Fig.14. Test circuit for reverse bias safe operating
area.
Vclamp < 1100V; Vcc = 150V; -Vbe = 5V,3V & 1V;
LB = 1µH; LC = 200µH
March 1999
5
Rev 1.000
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet BUJ304A.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| BUJ304A | Silicon Diffused Power Transistor | NXP Semiconductors |
| BUJ304AX | Silicon Diffused Power Transistor | NXP Semiconductors |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |