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기능 Silicon Diffused Power Transistor
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BUJ304AX 데이터시트, 핀배열, 회로
Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BUJ304AX
GENERAL DESCRIPTION
High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended
for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor
control systems, etc.
QUICK REFERENCE DATA
SYMBOL
VCESM
VCBO
VCEO
IC
ICM
Ptot
VCEsat
hFEsat
tf
PARAMETER
Collector-emitter voltage peak value
Collector-Base voltage (open emitter)
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Fall time (Inductive)
CONDITIONS
VBE = 0 V
Ths 25 ˚C
IC = 4.0 A;IB = 0.8 A
IC = 4.0 A; VCE = 5 V
IC = 5.0 A; IB1 = 1A
TYP.
-
-
-
-
-
-
0.3
11
25
MAX.
1000
1000
500
6
10
32
1.0
15
50
UNIT
V
V
V
A
A
W
V
ns
PINNING - SOT186A
PIN DESCRIPTION
1 base
2 collector
3 emitter
case isolated
PIN CONFIGURATION
case
12 3
SYMBOL
c
b
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VCESM
VCEO
VCBO
IC
ICM
IB
IBM
Ptot
Tstg
Tj
Collector to emitter voltage
Collector to emitter voltage (open base)
Collector to base voltage (open emitter)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Total power dissipation
Storage temperature
Junction temperature
VBE = 0 V
Ths 25 ˚C
THERMAL RESISTANCES
SYMBOL
Rth j-hs
Rth j-a
PARAMETER
Junction to heatsink
Junction to ambient
CONDITIONS
With heatsink compound
in free air
MIN.
-
-
-
-
-
-
-
-
-65
-
MAX.
1000
500
1000
6
10
3
6
32
150
150
UNIT
V
V
V
A
A
A
A
W
˚C
˚C
TYP.
-
55
MAX.
3.95
-
UNIT
K/W
K/W
March 1999
1
Rev 1.000




BUJ304AX pdf, 반도체, 판매, 대치품
Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BUJ304AX
120 %
110
Normalised Derating
with heatsink compound
100
90
80
70
60 P tot
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Ths / C
Fig.7. Normalised power dissipation.
PD% = 100PD/PD 25˚C = f (Ths)
hfe
100
5V
10 1V
1
0.01
Fig.8.
0.1
IC/A
1
10
Typical DC current gain. hFE = f(IC)
parameter VCE
VCEsat/V
2.0
1.6
IICC==11AA
2A 3A 4A
1.2
0.8
0.4
0.0
0.01
0.10 IB/A 1.00
10.00
Fig.9. Collector-Emitter saturation voltage.
Solid lines = typ values, VCEsat = f(IB); Tj=25˚C.
VBEsat/V
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.1 1 10
IC/A
Fig.10. Base-Emitter saturation voltage.
Solid lines = typ values, VBEsat = f(IC); at IC/IB =4.
VCEsat/V
0.5
0.4
0.3
0.2
0.1
0.0
0.1 1 10
IC/A
Fig.11. Collector-Emitter saturation voltage.
Solid lines = typ values, VCEsat = f(IC); at IC/IB =4.
Zth / (K/W)
10
BU1706AX
0.5
1 0.2
0.1
0.05
0.1 0.02
0.01
D=0
PD tp
tp
D= T
Tt
0.001
1u 10u 100u 1m 10m 100m 1 10 100
t/s
Fig.12. Transient thermal impedance.
Zth j-hs = f(t); parameter D = tp/T
March 1999
4
Rev 1.000

4페이지










BUJ304AX 전자부품, 판매, 대치품
Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BUJ304AX
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
© Philips Electronics N.V. 1999
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
March 1999
7
Rev 1.000

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