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PDF BUJ403AX Data sheet ( Hoja de datos )
| Número de pieza | BUJ403AX | |
| Descripción | Silicon Diffused Power Transistor | |
| Fabricantes | NXP Semiconductors | |
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Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BUJ403AX
GENERAL DESCRIPTION
High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended
for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor
control systems, etc.
QUICK REFERENCE DATA
SYMBOL
VCESM
VCBO
VCEO
IC
ICM
Ptot
VCEsat
hFEsat
tf
PARAMETER
Collector-emitter voltage peak value
Collector-Base voltage (open emitter)
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
DC current gain
Fall time
CONDITIONS
VBE = 0 V
Tmb ≤ 25 ˚C
IC = 2 A; IB = 0.4 A
IC = 3 A; VCE = 5 V
IC = 2.5 A; IB1 = 0.5 A
TYP.
-
-
-
-
-
-
0.15
15.5
170
MAX.
1200
1200
550
6
10
32
1.0
-
300
UNIT
V
V
V
A
A
W
V
ns
PINNING - SOT186A
PIN DESCRIPTION
1 base
2 collector
3 emitter
case isolated
PIN CONFIGURATION
case
12 3
SYMBOL
c
b
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VCESM
VCEO
VCBO
IC
ICM
IB
IBM
Ptot
Tstg
Tj
Collector to emitter voltage
Collector to emitter voltage (open base)
Collector to base voltage (open emitter)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Total power dissipation
Storage temperature
Junction temperature
VBE = 0 V
Ths ≤ 25 ˚C
THERMAL RESISTANCES
SYMBOL
Rth j-hs
Rth j-a
PARAMETER
Junction to heatsink
Junction to ambient
CONDITIONS
with heatsink compound
in free air
MIN.
-
-
-
-
-
-
-
-
-65
-
MAX.
1200
550
1200
6
10
3
5
32
150
150
UNIT
V
V
V
A
A
A
A
W
˚C
˚C
TYP.
-
55
MAX.
3.95
-
UNIT
K/W
K/W
December 1998
1
Rev 1.200
1 page  
Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BUJ403AX
IC (A)
11
10
9
8
7
6
5
4
3
2
1
0
0
Fig.13.
200
400
600
800
1,000
VCEclamp (V)
1,200
1,400
Reverse bias safe operating area. Tj ≤ Tj max
VCC
IBon
-VBB
LC
VCL
LB
T.U.T.
Fig.14. Test circuit for reverse bias safe operating
area.
Vcl ≤ 1000V; Vcc = 150V; VBB = -5V; LB = 1µH;Lc =
200µH
December 1998
5
Rev 1.200
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet BUJ403AX.PDF ] | |
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