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BUK104-50S 데이터시트 PDF




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부품번호 BUK104-50S 기능
기능 PowerMOS transistor Logic level TOPFET
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BUK104-50S 데이터시트, 핀배열, 회로
Philips Semiconductors
PowerMOS transistor
Logic level TOPFET
Product specification
BUK104-50L/S
BUK104-50LP/SP
DESCRIPTION
Monolithic temperature and
overload protected logic level power
MOSFET in a 5 pin plastic
envelope, intended as a general
purpose switch for automotive
systems and other applications.
APPLICATIONS
General controller for driving
lamps
motors
solenoids
heaters
QUICK REFERENCE DATA
SYMBOL PARAMETER
VDS
ID
Ptot
Tj
RDS(ON)
SYMBOL
Continuous drain source voltage
Continuous drain current
Total power dissipation
Continuous junction temperature
Drain-source on-state resistance
VIS = 5 V
VIS = 7 V
PARAMETER
VPSN
Protection supply voltage
BUK104-50L
BUK104-50S
MAX.
50
15
40
150
125
100
NOM.
UNIT
V
A
W
˚C
m
m
UNIT
5V
10 V
FEATURES
Vertical power DMOS output
stage
Low on-state resistance
Logic and protection supply
from separate pin
Low operating supply current
Overload protection against
over temperature
Overload protection against
short circuit load
Latched overload protection
reset by protection supply
Protection circuit condition
indicated by flag pin
5 V logic compatible input level
Separate input pin
for higher frequency drive
ESD protection on input, flag
and protection supply pins
Over voltage clamping for turn
off of inductive loads
Both linear and switching
operation are possible
FUNCTIONAL BLOCK DIAGRAM
PROTECTION SUPPLY
FLAG
INPUT
O/V
CLAMP
LOGIC AND
PROTECTION
Fig.1. Elements of the TOPFET.
DRAIN
POWER
MOSFET
SOURCE
PINNING - SOT263
PIN DESCRIPTION
1 input
2 flag
3 drain
4 protection supply
5 source
tab drain
PIN CONFIGURATION
SYMBOL
tab
1 2345
leadform
263-01
Fig. 2. Type numbers ending with
suffix P refer to leadform 263-01.
TOPFET
P
FP
I
D
S
Fig. 3.
January 1993
1
Rev 1.200




BUK104-50S pdf, 반도체, 판매, 대치품
Philips Semiconductors
PowerMOS transistor
Logic level TOPFET
Product specification
BUK104-50L/S
BUK104-50LP/SP
OVERLOAD PROTECTION CHARACTERISTICS
With adequate protection supply
voltage TOPFET detects when one
of the overload thresholds is
exceeded.
Provided there is adequate input
series resistance it switches off
and remains latched off until reset
by the protection supply pin.
Refer also to OVERLOAD
PROTECTION LIMITING VALUES
and INPUT CHARACTERISTICS.
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Short circuit load protection1 VPS = VPSN2; Tmb = 25 ˚C; L 10 µH;
RI 2 k
EDS(TO)
Overload threshold energy
VDD = 13 V; VIS = 10 V
- 150 - mJ
td sc Response time
VDD = 13 V; VIS = 10 V
- 375 -
µs
Tj(TO)
Over temperature protection
Threshold junction temperature
VPS = VPSN; RI
from ID 0.65
2
A3
k
150 -
- ˚C
TRANSFER CHARACTERISTICS
Tmb = 25 ˚C
SYMBOL PARAMETER
gfs Forward transconductance
ID Drain current4
CONDITIONS
VDS = 10 V; IDM = 7.5 A tp 300 µs;
δ ≤ 0.01
VDS = 13 V;
VIS = 5 V
VIS = 10 V
MIN. TYP. MAX. UNIT
59 -S
- 25 -
40 -
A
A
PROTECTION SUPPLY CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
IPS,
IPSL
VPSR
Protection supply
Protection supply current
Protection reset voltage5
normal operation or
protection latched
BUK104-50L
BUK104-50S
Tj = 150 ˚C
V(CL)PS
Protection clamp voltage
IP = 1.35 mA
MIN. TYP. MAX. UNIT
VPS = 5 V - 0.2 0.35 mA
VPS = 10 V - 0.4 1.0 mA
1.5 2.5 3.5 V
1.0 - - V
11 13
-
V
REVERSE DIODE CHARACTERISTICS
Tmb = 25 ˚C
SYMBOL PARAMETER
CONDITIONS
VSDS
trr
Forward voltage
Reverse recovery time
IS = 15 A; VIS = VPS = VFS = 0 V;
tp = 300 µs
not applicable6
MIN. TYP. MAX. UNIT
- 1.0 1.5 V
----
1 The short circuit load protection is able to save the device providing the instantaneous on-state dissipation is less than the limiting value for
PDSM, which is always the case when VDS is less than VDSP maximum.
2 At the appropriate nominal protection supply voltage for each type. Refer to QUICK REFERENCE DATA.
3 The over temperature protection feature requires a minimum on-state drain source voltage for correct operation. The specified minimum ID
ensures this condition.
4 During overload condition. Refer also to OVERLOAD PROTECTION LIMITING VALUES and CHARACTERISTICS.
5 The supply voltage below which the overload protection circuits will be reset.
6 The reverse diode of this type is not intended for applications requiring fast reverse recovery.
January 1993
4
Rev 1.200

4페이지










BUK104-50S 전자부품, 판매, 대치품
Philips Semiconductors
PowerMOS transistor
Logic level TOPFET
Product specification
BUK104-50L/S
BUK104-50LP/SP
120 PD%
Normalised Power Derating
110
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Tmb / C
Fig.4. Normalised limiting power dissipation.
PD% = 100PD/PD(25 ˚C) = f(Tmb)
ID%
120
Normalised Current Derating
110
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Tmb / C
Fig.5. Normalised continuous drain current.
ID% = 100ID/ID(25 ˚C) = f(Tmb); conditions: VIS = 5 V
ID & IDM / A
100
RDS(ON) = VDS/ID
10
DC
1
BUK104-50L/S
tp =
10 us
100 us
1 ms
10 ms
100 ms
Overload protection characteristics not shown
0.1
1
10 100
VDS / V
Fig.6. Safe operating area. Tmb = 25 ˚C
ID & IDM = f(VDS); IDM single pulse; parameter tp
Zth / (K/W)
10
BUK104-50L/S
D=
0.5
1
0.2
0.1
0.05
0.1 0.02
PD tp
D=
tp
T
0
0.01
1E-07
1E-05
1E-03
t/s
T
1E-01
t
Fig.7. Transient thermal impedance.
Zth j-mb = f(t); parameter D = tp/T
1E+01
ID / A
50
40
30
20
BUK104-50L/S
VIS / V =
10
9
8
7
6
5
4
10
3
2
0
0 4 8 12 16 20 24 28 32
VDS / V
Fig.8. Typical output characteristics, Tj = 25 ˚C.
ID = f(VDS); parameter VIS; tp = 250 µs & tp < td sc
ID / A
20
15
10
VIS / V = 10
BUK104-50L/S
7
6
5
4
5
3
0
012
VDS / V
Fig.9. Typical on-state characteristics, Tj = 25 ˚C.
ID = f(VDS); parameter VIS; tp = 250 µs
January 1993
7
Rev 1.200

7페이지


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