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PDF BUK107-50GL Data sheet ( Hoja de datos )
| Número de pieza | BUK107-50GL | |
| Descripción | PowerMOS transistor Logic level TOPFET | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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DISCRETE SEMICONDUCTORS
DATA SHEET
BUK107-50DL
PowerMOS transistor
Logic level TOPFET
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC13a
March 1997
1 page  
Philips Semiconductors
PowerMOS transistor
Logic level TOPFET
Product specification
BUK107-50DL
120 PD%
Normalised Power Derating
110
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Tmb / C
Fig.2. Normalised limiting power dissipation.
PD% = 100⋅PD/PD(25 ˚C) = f(Tmb)
ID / A
2.0
1.5
BUK107-50DL
CURRENT LIMITING OCCURS
WITHIN THE SHADED REGION
1.0 TYP.
0.5
0
0 20 40 60 80 100 120 140
Tamb / C
Fig.3. Continuous drain current.
ID = f(Tamb); condition: VIS = 5 V
ID / A
1.5
1
0.5
BUK107-50DL
VIS / V =
7
6
5
4
a
1.5
Normalised RDS(ON) = f(Tj)
1.0
0.5
0
-60 -40 -20 0
20 40 60 80 100 120 140
Tj / C
Fig.5. Normalised drain-source on-state resistance.
a = RDS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 100 mA; VIS = 5 V
RDS(ON) / mOhm
240
200
MAX.
BUK107-50DL
160 TYP.
120
80
40
0
0 2 4 6 8 10
VIS / V
Fig.6. Typical on-state resistance, Tj = 25 ˚C.
RDS(ON) = f(VIS); conditions: ID = 100 mA, tp = 300 µs
ID / A
1.5
BUK107-50DL
1
0.5
0
0 4 8 12 16 20 24 28 32
VDS / V
Fig.4. Typical on-state characteristics, Tj = 25 ˚C.
ID = f(VDS); parameter VIS; tp = 300 µs
0
0 2 4 6 8 10
VIS / V
Fig.7. Typical transfer characteristics, Tj = 25 ˚C.
ID = f(VIS); conditions: VDS = 10 V, tp = 300 µs
March 1997
5
Rev 1.200
5 Page 
Philips Semiconductors
PowerMOS transistor
Logic level TOPFET
NOTES
Product specification
BUK107-50DL
March 1997
11
Rev 1.200
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet BUK107-50GL.PDF ] | |
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