|
|
|
부품번호 | S20C50 기능 |
|
|
기능 | SCHOTTKY BARRIER RECTIFIERS | ||
제조업체 | Mospec Semiconductor | ||
로고 | |||
전체 2 페이지수
MOSPEC
Schottky Barrier Rectifiers
Using the Schottky Barrier principle with a Molybdenum barrier metal.
These state-of-the-art geometry features epitaxial construction with oxide
passivation and metal overlay contact. Ideally suited for low voltage, high
frequency rectification, or as free wheeling and polarity protection diodes.
Features
Low Forward Voltage.
Low Switching noise.
High Current Capacity
Guarantee Reverse Avalanche.
Guard-Ring for Stress Protection.
Low Power Loss & High efficiency.
150 Operating Junction Temperature
Low Stored Charge Majority Carrier Conduction.
Plastic Material used Carries Underwriters Laboratory
Flammability Classification 94V-O
ESD: 4KV(Min.) Human-Body Model
In compliance with EU RoHs 2002/95/EC directives
S20C30 thru S20C60
SCHOTTKY BARRIER
RECTIFIERS
20 AMPERES
30-60 VOLTS
TO-220AB
MAXIMUM RATINGS
Characteristic
Symbol
30
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
30
RMS Reverse Voltage
VR(RMS) 21
Average Rectifier Forward Current ( Per diode )
Total Device (Rated VR), TC=125
IF(AV)
Peak Repetitive Forward Current
(Rate VR, Square Wave, 20kHz)
Non-Repetitive Peak Surge Current (Surge
applied at rate load conditions halfware, single
phase, 60Hz)
IFM
IFSM
Operating and Storage Junction Temperature
Range
TJ , Tstg
S20C
35 40 45 50 60
35 40 45 50 60
25 28 32 35 42
10
20
20
200
-65 to +150
Unit
V
V
A
A
A
THERMAL RESISTANCES
Typical Thermal Resistance junction to case
Per diode
Total
Coupling
Rθjc
Rθ c
3.8
3.4
3.0
/w
DIM
MILLIMETERS
MIN MAX
A 14.68 15.32
B 9.78 10.42
C 5.02 6.52
D 13.06 14.62
E 3.57 4.07
F 2.42 2.66
G 1.12 1.36
H 0.72 0.96
I 4.22 4.98
J 1.14 1.38
K 2.20 2.98
L 0.33 0.55
M 2.48 2.98
O 3.70 3.90
ELECTRIAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage
( IF =10 Amp TC = 25 )
( IF =10 Amp TC = 100 )
Maximum Instantaneous Reverse Current
( Rated DC Voltage, TC = 25 )
( Rated DC Voltage, TC = 100 )
Symbol
S20C
Unit
30 35 40 45 50 60
VF 0.55 0.70 V
0.48 0.60
IR 0.5 mA
20
| |||
구 성 | 총 2 페이지수 | ||
다운로드 | [ S20C50.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
S20C50 | SCHOTTKY BARRIER RECTIFIERS | Mospec Semiconductor |
S20C50CE | (S20C30CE - S20C60CE) Schottky Barrier Rectifiers | Mospec Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |