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Número de pieza | PCD3350AH | |
Descripción | 8-bit microcontroller with DTMF generator/ 256 bytes EEPROM and real-time clock | |
Fabricantes | NXP Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de PCD3350AH (archivo pdf) en la parte inferior de esta página. Total 30 Páginas | ||
No Preview Available ! INTEGRATED CIRCUITS
DATA SHEET
PCD3350A
8-bit microcontroller with DTMF
generator, 256 bytes EEPROM and
real-time clock
Product specification
Supersedes data of 1996 May 09
File under Integrated Circuits, IC03
1996 Dec 18
1 page Philips Semiconductors
8-bit microcontroller with DTMF generator,
256 bytes EEPROM and real-time clock
5 PINNING INFORMATION
5.1 Pinning
handbook, full pagewidth
P2.1 1
P2.2 2
P2.3 3
DP0.0/RCO 4
DP0.1 5
DP0.2 6
DP0.3 7
DP0.4 8
DP0.5 9
RTC1 10
RTC2 11
PCD3350AH
Product specification
PCD3350A
33 P1.0
32 P0.7
31 P0.6
30 P0.5
29 P0.4
28 XTAL2
27 XTAL1
26 P0.3
25 P0.2
24 P0.1
23 P0.0
MED264
Fig.2 Pin configuration.
1996 Dec 18
5
5 Page Philips Semiconductors
8-bit microcontroller with DTMF generator,
256 bytes EEPROM and real-time clock
Product specification
PCD3350A
7 EEPROM AND TIMER 2 ORGANIZATION
The PCD3350A has 256 bytes of Electrically Erasable
Programmable Read Only Memory (EEPROM). Such
non-volatile storage provides data retention without the
need for battery backup. In telecom applications, the
EEPROM is used for storing redial numbers and for short
dialling of frequently used numbers. More generally,
EEPROM may be used for customizing microcontrollers,
such as to include a PIN code or a country code, to define
trimming parameters, to select application features from
the range stored in ROM.
The most significant difference between a RAM and an
EEPROM is that a bit in EEPROM, once written to a
logic 1, cannot be cleared by a subsequent write
operation. Successive write accesses actually perform a
logical OR with the previously stored information.
Therefore, to clear a bit, the whole byte must be erased
and re-written with the particular bit cleared. Thus, an
erase-and-write operation is the EEPROM equivalent of a
RAM write operation.
Whereas read access times to an EEPROM are
comparable to RAM access times, write and erase access
times are much slower at 5 ms each. To make these
operations more efficient, several provisions are available
in the PCD3350A.
First, the EEPROM array is structured into 64 four-byte
pages (see Fig.4) permitting access to 4 bytes in parallel
(write page, erase/write page and erase page). It is also
possible to erase and write individual bytes.
Finally, the EEPROM address register provides
auto-incrementing, allowing very efficient read and write
accesses to sequential bytes.
To simplify the erase and write timing, the derivative 8-bit
down-counter (Timer 2) with reload register is provided.
In addition to EEPROM timing, Timer 2 can be used for
general real-time tasks, such as for measuring signal
duration and for defining pulse widths.
1996 Dec 18
11
11 Page |
Páginas | Total 30 Páginas | |
PDF Descargar | [ Datasheet PCD3350AH.PDF ] |
Número de pieza | Descripción | Fabricantes |
PCD3350A | 8-bit microcontroller with DTMF generator/ 256 bytes EEPROM and real-time clock | NXP Semiconductors |
PCD3350AH | 8-bit microcontroller with DTMF generator/ 256 bytes EEPROM and real-time clock | NXP Semiconductors |
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