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부품번호 | UMD6N 기능 |
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기능 | NPN + PNP Complex Digital Transistors | ||
제조업체 | ROHM Semiconductor | ||
로고 | |||
전체 8 페이지수
EMD6 / UMD6N / IMD6A
NPN + PNP Complex Digital Transistors (Bias Resistor Built-in Transistors) Datasheet
<For DTr1(NPN)>
Parameter
VCEO
IC
R1
<For DTr2(PNP)>
Parameter
VCEO
IC
R1
Value
50V
100mA
4.7kW
Value
-50V
-100mA
4.7kW
lOutline
EMT6
(6)
(5)
(4)
(1)
(2)
(3)
EMD6
(SC-107C)
SMT6
(4)
(5)
(6)
(3)
(2)
(1)
IMD6A
SOT-457 (SC-74)
UMT6
(6)
(5)
(4)
(1)
(2)
(3)
UMD6N
SOT-353 (SC-88)
lFeatures
1) Both the DTC143T chip and DTA143T chip
in one package.
2) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see inner circuit).
3) The bias resistors consist of thin-film resistors
with complete isolation to allow negative biasing
of the input. They also have the advantage of
completely eliminating parasitic effects.
4) Only the on/off conditions need to be set for
operation, making the circuit design easy.
5) Lead Free/RoHS Compliant.
lInner circuit
Collector
(6)
Base
(5)
Emitter
(4)
DTr1
DTr2
(1)
Emitter
(2)
Base
(3)
Collector
EMD6 / UMD6N
Collector
(4)
Base
(5)
Emitter
(6)
lApplication
Inverter circuit, Interface circuit, Driver circuit
lPackaging specifications
Part No.
Package
EMD6
UMD6N
IMD6A
EMT6
UMT6
SMT6
Package
size
(mm)
1616
2021
2928
Taping
code
T2R
TR
T108
DTr2
DTr1
(3)
Emitter
(2)
Base
IMD6A
(1)
Collector
Reel size
(mm)
Tape width
(mm)
Basic
ordering
unit (pcs)
180 8 8,000
180 8 3,000
180 8 3,000
Marking
D6
D6
D6
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
1/7
2013.05 - Rev.B
EMD6 / UMD6N / IMD6A
lElectrical characteristic curves(Ta = 25°C) <For DTr2(PNP)>
Data Sheet
Fig.1 Grounded emitter propagation
characteristics
-10
VCE= -5V
-1
-0.1
-0.01
Ta=100ºC
25ºC
-40ºC
-0.001
0
-0.5 -1 -1.5
-2
BASE TO EMITTER VOLTAGE : VBE [V]
Fig.2 Grounded emitter output
characteristics
-100
Ta=25ºC
-80
-60
-40
IB=
-500μA
-450μA
-400μA
-350μA
-300μA
-250μA
-200μA
-150μA
-20 -100μA
-50μA
0 0A
0 -2 -4 -6 -8 -10
COLLECTOR TO EMITTER
VOLTAGE : VCE [V]
Fig.3 DC Current gain
vs. Collector Current
Fig.4 Collector-emitter saturation voltage
vs. Collector Current
COLLECTOR CURRENT : IC [A]
COLLECTOR CURRENT : IC [A]
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
4/7
2013.05 - Rev.B
4페이지 EMD6 / UMD6N / IMD6A
lDimensions (Unit : mm)
D
SMT6
e
A
c
Q
b x SA
A3
e
Data Sheet
yS
S
b2
Pattern of terminal position areas
[Not a recommended pattern of soldering pads]
DIM
MILIMETERS
MIN MAX
A 1.00
1.30
A1 0.00
0.10
A3 0.25
b 0.25
0.40
c 0.09
0.25
D 2.80
3.00
E 1.50
1.80
e 0.95
HE 2.60
3.00
L1 0.30
0.60
Lp 0.40
0.70
Q 0.20
0.30
x-
0.20
y-
0.10
DIM
MILIMETERS
MIN MAX
b2 0.60
e1 2.10
l1 -
0.90
Dimension in mm / inches
INCHES
MIN MAX
0.039
0.051
0.000
0.004
0.010
0.010
0.016
0.004
0.010
0.110
0.118
0.059
0.071
0.037
0.102
0.118
0.012
0.024
0.016
0.028
0.008
0.012
- 0.008
- 0.004
INCHES
MIN MAX
- 0.024
0.083
- 0.035
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
7/7
2013.05 - Rev.B
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부품번호 | 상세설명 및 기능 | 제조사 |
UMD6N | NPN + PNP Complex Digital Transistors | ROHM Semiconductor |
UMD6N | Dual NPN+PNP Digital Transistors | SeCoS |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |