|
|
|
부품번호 | UMF6N 기능 |
|
|
기능 | Power management (dual transistors) | ||
제조업체 | ROHM Semiconductor | ||
로고 | |||
전체 6 페이지수
Transistors
UMF6N
Power management (dual transistors)
UMF6N
2SA2018 and 2SK3019 are housed independently in a UMT package.
!Application
Power management circuit
!External dimensions (Units : mm)
!Features
1) Power switching circuit in a single package.
2) Mounting cost and area can be cut in half.
!Structure
Silicon epitaxial planar transistor
!Equivalent circuits
(3) (2) (1)
Tr1
Tr2
(4) (5) (6)
1.25
2.1
0.1Min.
ROHM : UMT6
EIAJ : SC-88
Each lead has same dimensions
!Packaging specifications
Type
Package
Marking
Code
Basic ordering unit (pieces)
UMF6N
UMT6
F6
TR
3000
1/5
Transistors
Tr2
0.15
0.1
4V
3.5V
3V
Ta=25°C
Pulsed
2.5V
0.05
2V
VGS=1.5V
0
01 2 34 5
DRAIN-SOURCE VOLTAGE : VDS (V)
Fig.9 Typical output characteristics
200m
VDS=3V
100m Pulsed
50m
20m
10m
5m
2m
1m
0.5m
0.2m
0.1m
0
Ta=125°C
75°C
25°C
−25°C
123
GATE-SOURCE VOLTAGE : VGS (V)
4
Fig.10 Typical transfer characteristics
UMF6N
2 VDS=3V
ID=0.1mA
Pulsed
1.5
1
0.5
0
−50 −25 0 25 50 75 100 125 150
CHANNEL TEMPERATURE : Tch (°C)
Fig.11 Gate threshold voltage vs.
channel temperature
50
20 Ta=125°C
75°C
25°C
10 −25°C
5
VGS=4V
Pulsed
50
Ta=125°C
20
75°C
25°C
−25°C
10
5
VGS=2.5V
Pulsed
22
1
0.5
0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2
DRAIN CURRENT : ID (A)
0.5
1
0.5
0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2
DRAIN CURRENT : ID (A)
0.5
Fig.12 Static drain-source on-state
Fig.13 Static drain-source on-state
resistance vs. drain current ( Ι )
resistance vs. drain current ( ΙΙ )
15 Ta=25°C
Pulsed
10
5
ID=0.1A
ID=0.05A
0
0 5 10 15 20
GATE-SOURCE VOLTAGE : VGS (V)
Fig.14 Static drain-source on-state
resistance vs. gate-source
voltage
9 VGS=4V
8 Pulsed
7
ID=100mA
6
5 ID=50mA
4
3
2
1
0
−50 −25 0 25 50 75 100 125 150
CHANNEL TEMPERATURE : Tch (°C)
0.5
0.2
Ta=−25°C
0.1 25°C
0.05
75°C
125°C
0.02
0.01
0.005
VDS=3V
Pulsed
0.002
0.001
0.0001 0.0002 0.0005 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2
DRAIN CURRENT : ID (A)
0.5
200m
100m
50m
VGS=0V
Pulsed
20m
Ta=125°C
10m 75°C
5m 25°C
−25°C
2m
1m
0.5m
0.2m
0.1m
0 0.5 1 1.5
SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.15 Static drain-source on-state
Fig.16 Forward transfer admittance vs.
resistance vs. channel temperature
drain current
Fig.17 Reverse drain current vs.
source-drain voltage ( Ι )
4/5
4페이지 | |||
구 성 | 총 6 페이지수 | ||
다운로드 | [ UMF6N.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
UMF6N | Power management (dual transistors) | ROHM Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |