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부품번호 | UN1123 기능 |
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기능 | Silicon PNP epitaxial planer transistor | ||
제조업체 | Panasonic Semiconductor | ||
로고 | |||
전체 6 페이지수
Transistors with built-in Resistor
UN1121/1122/1123/1124/112X/112Y
Silicon PNP epitaxial planer transistor
For digital circuits
s Features
q Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
q M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
6.9±0.1
1.5
1.5 R0.9
R0.9
Unit: mm
2.5±0.1
1.0
s Resistance by Part Number
q UN1121
q UN1122
q UN1123
q UN1124
q UN112X
q UN112Y
(R1)
2.2kΩ
4.7kΩ
10kΩ
2.2kΩ
0.27kΩ
3.1kΩ
(R2)
2.2kΩ
4.7kΩ
10kΩ
10kΩ
5kΩ
4.6kΩ
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
IC
PT
Tj
Tstg
Ratings
–50
–50
–500
600
150
–55 to +150
Unit
V
V
mA
mW
˚C
˚C
0.85
0.55±0.1
321
0.45±0.05
2.5 2.5
1:Base
2:Collector
3:Emitter
M Type Mold Package
Internal Connection
R1
B
R2
C
E
1
Transistors with built-in Resistor
UN1121/1122/1123/1124/112X/112Y
Cob — VCB
24
f=1MHz
IE=0
Ta=25˚C
20
16
12
8
4
0
–0.1 –0.3 –1 –3 –10 –30 –100
Collector to base voltage VCB (V)
–10000
– 3000
–1000
IO — VIN
VO= – 5V
Ta=25˚C
– 300
–100
– 30
–10
–3
–1
– 0.4
–0.6 –0.8 –1.0 –1.2
Input voltage VIN (V)
–1.4
–100
– 30
–10
VIN — IO
VO= – 0.2V
Ta=25˚C
–3
–1
– 0.3
– 0.1
– 0.03
– 0.01
–0.1 –0.3 –1 –3 –10 –30 –100
Output current IO (mA)
Characteristics charts of UN1123
– 240
IC — VCE
Ta=25˚C
– 200
–160
–120
IB= –1.0mA
– 0.9mA
– 0.8mA
– 0.7mA
– 0.6mA
– 0.5mA
–80 –0.4mA
– 0.3mA
–40 –0.2mA
– 0.1mA
0
0 –2 –4 –6 –8 –10 –12
Collector to emitter voltage VCE (V)
–100
– 30
–10
VCE(sat) — IC
IC/IB=10
–3
–1
– 0.3
– 0.1
25˚C
Ta=75˚C
– 0.03
– 25˚C
– 0.01
–1 –3 –10 –30 –100 –300 –1000
Collector current IC (mA)
hFE — IC
200
VCE= –10V
Ta=75˚C
25˚C
150
100 –25˚C
50
0
–1 –3 –10 –30 –100 –300 –1000
Collector current IC (mA)
Cob — VCB
24
f=1MHz
IE=0
Ta=25˚C
20
16
12
8
4
0
–0.1 –0.3 –1 –3 –10 –30 –100
Collector to base voltage VCB (V)
–10000
– 3000
–1000
IO — VIN
VO= – 5V
Ta=25˚C
– 300
–100
– 30
–10
–3
–1
– 0.4
–0.6 –0.8 –1.0 –1.2
Input voltage VIN (V)
–1.4
–100
– 30
–10
VIN — IO
VO= – 0.2V
Ta=25˚C
–3
–1
– 0.3
– 0.1
– 0.03
– 0.01
–0.1 –0.3 –1 –3 –10 –30 –100
Output current IO (mA)
4
4페이지 | |||
구 성 | 총 6 페이지수 | ||
다운로드 | [ UN1123.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
UN1121 | Silicon PNP epitaxial planer transistor | Panasonic Semiconductor |
UN1122 | Silicon PNP epitaxial planer transistor | Panasonic Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |