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UN2113 데이터시트 PDF




Panasonic Semiconductor에서 제조한 전자 부품 UN2113은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

PDF 형식의 UN2113 자료 제공

부품번호 UN2113 기능
기능 Silicon PNP epitaxial planer transistor
제조업체 Panasonic Semiconductor
로고 Panasonic Semiconductor 로고


UN2113 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




전체 17 페이지수

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UN2113 데이터시트, 핀배열, 회로
Transistors with built-in Resistor
UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z
Silicon PNP epitaxial planer transistor
For digital circuits
s Features
q Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
q Mini type package, allowing downsizing of the equipment and
automatic insertion through tape packing and magazine packing.
0.65±0.15
+0.2
2.8 –0.3
+0.25
1.5 –0.05
Unit: mm
0.65±0.15
1
3
2
s Resistance by Part Number
Marking Symbol (R1)
q UN2111
6A
10k
q UN2112
6B
22k
q UN2113
6C
47k
q UN2114
6D
10k
q UN2115
6E
10k
q UN2116
6F
4.7k
q UN2117
6H
22k
q UN2118
6I
0.51k
q UN2119
6K
1k
q UN2110
6L
47k
q UN211D
6M
47k
q UN211E
6N
47k
q UN211F
6O
4.7k
q UN211H
6P
2.2k
q UN211L
6Q
4.7k
q UN211M
EI
2.2k
q UN211N
EW
4.7k
q UN211T
EY
22k
q UN211V
FC
2.2k
q UN211Z
FE
4.7k
(R2)
10k
22k
47k
47k
5.1k
10k
10k
22k
10k
10k
4.7k
47k
47k
47k
2.2k
22k
0.1 to 0.3
0.4±0.2
1:Base
2:Emitter
3:Collector
EIAJ:SC-59
Mini Type Package
Internal Connection
R1
B
R2
C
E
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
IC
PT
Tj
Tstg
Ratings
–50
–50
–100
200
150
–55 to +150
Unit
V
V
mA
mW
˚C
˚C
1




UN2113 pdf, 반도체, 판매, 대치품
UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
Transistors with built-in Resistor 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z
Common characteristics chart
PT — Ta
250
200
150
100
50
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
Characteristics charts of UN2111
–160
–140
–120
IC — VCE
Ta=25˚C
IB= –1.0mA
– 0.9mA
– 0.8mA
–100
– 80
– 60
– 40
– 0.7mA
– 0.6mA
– 0.5mA
– 0.4mA
– 0.3mA
– 0.2mA
– 20
– 0.1mA
0
0 –2 –4 –6 –8 –10 –12
Collector to emitter voltage VCE (V)
–100
– 30
–10
VCE(sat) — IC
IC/IB=10
–3
–1
– 0.3
– 0.1
– 0.03
25˚C
– 25˚C
Ta=75˚C
– 0.01
–0.1 –0.3 –1 –3 –10 –30 –100
Collector current IC (mA)
hFE — IC
160
VCE= –10V
Ta=75˚C
25˚C
120
– 25˚C
80
40
0
–1 –3 –10 –30 –100 –300 –1000
Collector current IC (mA)
Cob — VCB
6
f=1MHz
IE=0
Ta=25˚C
5
4
3
2
1
0
–0.1 –0.3 –1 –3 –10 –30 –100
Collector to base voltage VCB (V)
4
–10000
–3000
–1000
IO — VIN
VO= – 5V
Ta=25˚C
– 300
–100
– 30
–10
–3
–1
– 0.4
–0.6 –0.8 –1.0 –1.2
Input voltage VIN (V)
–1.4
–100
– 30
–10
VIN — IO
VO= – 0.2V
Ta=25˚C
–3
–1
– 0.3
– 0.1
– 0.03
– 0.01
–0.1 –0.3 –1 –3 –10 –30 –100
Output current IO (mA)

4페이지










UN2113 전자부품, 판매, 대치품
UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
Transistors with built-in Resistor 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z
Characteristics charts of UN2115
–160
–140
–120
–100
– 80
– 60
– 40
– 20
IC — VCE
IB= –1.0mA
Ta=25˚C
– 0.9mA
– 0.8mA
– 0.7mA
– 0.6mA
– 0.5mA
– 0.4mA
– 0.3mA
– 0.2mA
– 0.1mA
0
0 –2 –4 –6 –8 –10 –12
Collector to emitter voltage VCE (V)
–100
– 30
–10
VCE(sat) — IC
IC/IB=10
–3
–1
– 0.3
– 0.1
25˚C
Ta=75˚C
– 0.03
– 25˚C
– 0.01
–0.1 –0.3 –1 –3 –10 –30 –100
Collector current IC (mA)
hFE — IC
400
VCE= –10V
300
Ta=75˚C
200 25˚C
– 25˚C
100
0
–1 –3 –10 –30 –100 –300 –1000
Collector current IC (mA)
Cob — VCB
6
f=1MHz
IE=0
Ta=25˚C
5
4
3
2
1
0
–0.1 –0.3 –1 –3 –10 –30 –100
Collector to base voltage VCB (V)
–10000
– 3000
–1000
IO — VIN
VO= – 5V
Ta=25˚C
– 300
–100
– 30
–10
–3
–1
– 0.4
–0.6 –0.8 –1.0 –1.2
Input voltage VIN (V)
–1.4
–100
– 30
–10
VIN — IO
VO= – 0.2V
Ta=25˚C
–3
–1
– 0.3
– 0.1
– 0.03
– 0.01
–0.1 –0.3 –1 –3 –10 –30 –100
Output current IO (mA)
Characteristics charts of UN2116
–160
–140
–120
–100
– 80
– 60
– 40
IC — VCE
Ta=25˚C
IB= –1.0mA
– 0.9mA
– 0.8mA
– 0.7mA
– 0.6mA
– 0.5mA
– 0.4mA
– 0.3mA
– 0.2mA
–20 –0.1mA
0
0 –2 –4 –6 –8 –10 –12
Collector to emitter voltage VCE (V)
–100
– 30
–10
VCE(sat) — IC
IC/IB=10
–3
–1
– 0.3
– 0.1
25˚C
Ta=75˚C
– 0.03
– 25˚C
– 0.01
–0.1 –0.3 –1 –3 –10 –30 –100
Collector current IC (mA)
hFE — IC
400
VCE= –10V
300
Ta=75˚C
200
25˚C
– 25˚C
100
0
–1 –3 –10 –30 –100 –300 –1000
Collector current IC (mA)
7

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관련 데이터시트

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Silicon PNP epitaxial planer transistor

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UN2111

Silicon PNP epitaxial planer transistor

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