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UN511Z 데이터시트 PDF




Panasonic Semiconductor에서 제조한 전자 부품 UN511Z은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 UN511Z 자료 제공

부품번호 UN511Z 기능
기능 Silicon PNP epitaxial planer transistor
제조업체 Panasonic Semiconductor
로고 Panasonic Semiconductor 로고


UN511Z 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.



전체 17 페이지수

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UN511Z 데이터시트, 핀배열, 회로
Transistors with built-in Resistor
UN5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/
511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z
Silicon PNP epitaxial planer transistor
For digital circuits
s Features
q Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
q S-Mini type package, allowing automatic insertion through tape
packing and magazine packing.
Unit: mm
0.425
2.1±0.1
1.25±0.1
0.425
1
3
2
s Resistance by Part Number
Marking Symbol
q UN5111
6A
q UN5112
6B
q UN5113
6C
q UN5114
6D
q UN5115
6E
q UN5116
6F
q UN5117
6H
q UN5118
6I
q UN5119
6K
q UN5110
6L
q UN511D
6M
q UN511E
6N
q UN511F
6O
q UN511H
6P
q UN511L
6Q
q UN511M
EI
q UN511N
EW
q UN511T
EY
q UN511V
FC
q UN511Z
FE
(R1)
10k
22k
47k
10k
10k
4.7k
22k
0.51
1k
47k
47k
47k
4.7k
2.2k
4.7k
2.2k
4.7k
22k
2.2k
4.7k
(R2)
10k
22k
47k
47k
5.1k
10k
10k
22k
10k
10k
4.7k
47k
47k
47k
2.2k
22k
0.2±0.1
1 : Base
2 : Emitter
3 : Collector
EIAJ : SC–70
S–Mini Type Package
Internal Connection
R1
B
R2
C
E
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
IC
PT
Tj
Tstg
Ratings
–50
–50
–100
150
150
–55 to +150
Unit
V
V
mA
mW
˚C
˚C
1




UN511Z pdf, 반도체, 판매, 대치품
UN5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/
Transistors with built-in Resistor 511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z
Common characteristics chart
PT — Ta
240
200
160
120
80
40
0
0 40 80 120 160
Ambient temperature Ta (˚C)
Characteristics charts of UN5111
–160
–140
–120
IC — VCE
Ta=25˚C
IB= –1.0mA
– 0.9mA
– 0.8mA
–100
– 80
– 60
– 40
– 0.7mA
– 0.6mA
– 0.5mA
– 0.4mA
– 0.3mA
– 0.2mA
– 20
– 0.1mA
0
0 –2 –4 –6 –8 –10 –12
Collector to emitter voltage VCE (V)
–100
– 30
–10
VCE(sat) — IC
IC/IB=10
–3
–1
– 0.3
– 0.1
– 0.03
25˚C
– 25˚C
Ta=75˚C
– 0.01
–0.1 –0.3 –1 –3 –10 –30 –100
Collector current IC (mA)
hFE — IC
160
VCE= –10V
Ta=75˚C
25˚C
120
– 25˚C
80
40
0
–1 –3 –10 –30 –100 –300 –1000
Collector current IC (mA)
Cob — VCB
6
f=1MHz
IE=0
Ta=25˚C
5
4
3
2
1
0
–0.1 –0.3 –1 –3 –10 –30 –100
Collector to base voltage VCB (V)
4
–10000
–3000
–1000
IO — VIN
VO= – 5V
Ta=25˚C
– 300
–100
– 30
–10
–3
–1
– 0.4
–0.6 –0.8 –1.0 –1.2
Input voltage VIN (V)
–1.4
–100
– 30
–10
VIN — IO
VO= – 0.2V
Ta=25˚C
–3
–1
– 0.3
– 0.1
– 0.03
– 0.01
–0.1 –0.3 –1 –3 –10 –30 –100
Output current IO (mA)

4페이지










UN511Z 전자부품, 판매, 대치품
UN5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/
Transistors with built-in Resistor 511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z
Characteristics charts of UN5115
–160
–140
–120
–100
– 80
– 60
– 40
– 20
IC — VCE
IB= –1.0mA
Ta=25˚C
– 0.9mA
– 0.8mA
– 0.7mA
– 0.6mA
– 0.5mA
– 0.4mA
– 0.3mA
– 0.2mA
– 0.1mA
0
0 –2 –4 –6 –8 –10 –12
Collector to emitter voltage VCE (V)
–100
– 30
–10
VCE(sat) — IC
IC/IB=10
–3
–1
– 0.3
– 0.1
25˚C
Ta=75˚C
– 0.03
– 25˚C
– 0.01
–0.1 –0.3 –1 –3 –10 –30 –100
Collector current IC (mA)
hFE — IC
400
VCE= –10V
300
Ta=75˚C
200 25˚C
– 25˚C
100
0
–1 –3 –10 –30 –100 –300 –1000
Collector current IC (mA)
Cob — VCB
6
f=1MHz
IE=0
Ta=25˚C
5
4
3
2
1
0
–0.1 –0.3 –1 –3 –10 –30 –100
Collector to base voltage VCB (V)
–10000
– 3000
–1000
IO — VIN
VO= – 5V
Ta=25˚C
– 300
–100
– 30
–10
–3
–1
– 0.4
–0.6 –0.8 –1.0 –1.2
Input voltage VIN (V)
–1.4
–100
– 30
–10
VIN — IO
VO= – 0.2V
Ta=25˚C
–3
–1
– 0.3
– 0.1
– 0.03
– 0.01
–0.1 –0.3 –1 –3 –10 –30 –100
Output current IO (mA)
Characteristics charts of UN5116
–160
–140
–120
–100
– 80
– 60
– 40
IC — VCE
Ta=25˚C
IB= –1.0mA
– 0.9mA
– 0.8mA
– 0.7mA
– 0.6mA
– 0.5mA
– 0.4mA
– 0.3mA
– 0.2mA
–20 –0.1mA
0
0 –2 –4 –6 –8 –10 –12
Collector to emitter voltage VCE (V)
–100
– 30
–10
VCE(sat) — IC
IC/IB=10
–3
–1
– 0.3
– 0.1
25˚C
Ta=75˚C
– 0.03
– 25˚C
– 0.01
–0.1 –0.3 –1 –3 –10 –30 –100
Collector current IC (mA)
hFE — IC
400
VCE= –10V
300
Ta=75˚C
200
25˚C
– 25˚C
100
0
–1 –3 –10 –30 –100 –300 –1000
Collector current IC (mA)
7

7페이지


구       성 총 17 페이지수
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