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부품번호 | UNR4213 기능 |
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기능 | Silicon NPN epitaxial planar type | ||
제조업체 | Panasonic Semiconductor | ||
로고 | |||
전체 14 페이지수
Transistors with built-in Resistor
UNR421x Series (UN421x Series)
Silicon NPN epitaxial planar type
For digital circuits
4.0±0.2
2.0±0.2
Unit: mm
■ Features
• Costs can be reduced through downsizing of the equipment and
reduction of the number of parts
• New S type package, allowing supply with the radial taping
■ Resistance by Part Number
• UNR4210 (UN4210)
(R1)
47 kΩ
• UNR4211 (UN4211)
10 kΩ
• UNR4212 (UN4212)
22 kΩ
• UNR4213 (UN4213)
47 kΩ
• UNR4214 (UN4214)
10 kΩ
• UNR4215 (UN4215)
10 kΩ
• UNR4216 (UN4216)
4.7 kΩ
• UNR4217 (UN4217)
22 kΩ
• UNR4218 (UN4218)
0.51 kΩ
• UNR4219 (UN4219)
1 kΩ
• UNR421D (UN421D)
47 kΩ
• UNR421E (UN421E)
47 kΩ
• UNR421F (UN421F)
4.7 kΩ
• UNR421K (UN421K)
10 kΩ
• UNR421L (UN421L)
4.7 kΩ
(R2)
10 kΩ
22 kΩ
47 kΩ
47 kΩ
5.1 kΩ
10 kΩ
10 kΩ
22 kΩ
10 kΩ
4.7 kΩ
4.7 kΩ
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
IC
PT
Tj
Tstg
50
50
100
300
150
−55 to +150
Unit
V
V
mA
mW
°C
°C
0.75 max.
0.45+–00..1200
(2.5) (2.5)
123
Internal Connection
R1
B
R2
0.45+–00..1200
0.7±0.1
1: Emitter
2: Collector
3: Base
NS-B1 Package
C
E
Publication date: December 2003
Note) The part numbers in the parenthesis show conventional part number.
SJH00020BED
1
UNR421x Series
Characteristics charts of UNR4211
IC VCE
160
IB = 1.0 mA
0.9 mA
0.8 mA
Ta = 25°C
120
0.7 mA
0.6 mA
0.5 mA
0.4 mA
80 0.3 mA
100
10
1
VCE(sat) IC
IC / IB = 10
0.2 mA
40
0.1 mA
0
0 2 4 6 8 10 12
Collector-emitter voltage VCE (V)
25°C Ta = 75°C
0.1
−25˚C
0.01
0.1
1 10
Collector current IC (mA)
100
Cob VCB
6
f = 1 MHz
IE = 0
Ta = 25°C
5
4
3
2
1
0
0.1 1
10 100
Collector-base voltage VCB (V)
IO VIN
104 VO = 5 V
Ta = 25°C
103
102
10
1
0.4 0.6 0.8 1.0 1.2 1.4
Input voltage VIN (V)
hFE IC
400
VCE = 10 V
300
Ta = 75°C
200
25°C
100 −25°C
0
1 10 100 1 000
Collector current IC (mA)
VIN IO
100 VO = 0.2 V
Ta = 25°C
10
1
0.1
0.01
0.1
1 10
Output current IO (mA)
100
Characteristics charts of UNR4212
IC VCE
160
Ta = 25°C
IB = 1.0 mA
0.9 mA
120 0.8 mA
0.7 mA
0.6 mA
0.5 mA
0.4 mA
80
0.3 mA
40 0.2 mA
0.1 mA
0
0 2 4 6 8 10 12
Collector-emitter voltage VCE (V)
VCE(sat) IC
100 IC / IB = 10
10
1
25°C
Ta = 75°C
0.1
−25°C
0.01
0.1
1 10
Collector current IC (mA)
100
4 SJH00020BED
hFE IC
400
VCE = 10 V
300
Ta = 75°C
200
25°C
−25°C
100
0
1 10 100 1 000
Collector current IC (mA)
4페이지 Cob VCB
6
f = 1 MHz
IE = 0
Ta = 25°C
5
4
3
2
1
0
0.1 1 10 100
Collector-base voltage VCB (V)
UNR421x Series
IO VIN
VIN IO
104
VO = 5 V
100
VO = 0.2 V
Ta = 25°C
Ta = 25°C
103 10
102 1
10 0.1
1
0.4 0.6 0.8 1.0 1.2 1.4
Input voltage VIN (V)
0.01
0.1
1 10
Output current IO (mA)
100
Characteristics charts of UNR4216
IC VCE
160
Ta = 25°C
IB = 1.0 mA
120
0.9 mA
0.8 mA
0.7 mA
0.6 mA
0.5 mA
80 0.4 mA
0.3 mA
0.2 mA
40
100
10
1
0.1
VCE(sat) IC
IC / IB = 10
25°C
Ta = 75°C
0.1 mA
0
0 2 4 6 8 10 12
Collector-emitter voltage VCE (V)
−25°C
0.01
0.1 1 10
Collector current IC (mA)
100
Cob VCB
6
f = 1 MHz
IE = 0
Ta = 25°C
5
4
3
2
1
0
0.1 1 10 100
Collector-base voltage VCB (V)
IO VIN
104 VO = 5 V
Ta = 25°C
103
102
10
1
0.4 0.6 0.8 1.0 1.2 1.4
Input voltage VIN (V)
hFE IC
400
VCE = 10 V
Ta = 75°C
300 25°C
−25°C
200
100
0
1 10 100 1 000
Collector current IC (mA)
VIN IO
100 VO = 0.2 V
Ta = 25°C
10
1
0.1
0.01
0.1
1 10
Output current IO (mA)
100
SJH00020BED
7
7페이지 | |||
구 성 | 총 14 페이지수 | ||
다운로드 | [ UNR4213.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
UNR4210 | Silicon NPN epitaxial planar type | Panasonic Semiconductor |
UNR4211 | Silicon NPN epitaxial planar type | Panasonic Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |