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부품번호 | UP04315 기능 |
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기능 | Silicon NPN epitaxial planar type Silicon PNP epitaxial planar type | ||
제조업체 | Panasonic Semiconductor | ||
로고 | |||
전체 4 페이지수
Composite Transistors
UP04315
Silicon NPN epitaxial planar type (Tr1)
Silicon PNP epitaxial planar type (Tr2)
For switching/digital circuits
(0.30)
654
0.20+–00..0025
Unit: mm
0.10±0.02
■ Features
• Two elements incorporated into one package
(Transistors with built-in resistor)
• Reduction of the mounting area and assembly cost by one half
■ Basic Part Number
• UNR2215 + UNR2115
123
(0.50)(0.50)
1.00±0.05
1.60±0.05
Display at No.1 lead
5˚
5˚
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Tr1 Collector-base voltage
(Emitter open)
VCBO
50
Collector-emitter voltage
(Base open)
VCEO
50
Collector current
Tr2 Collector-base voltage
(Emitter open)
IC
VCBO
100
−50
Collector-emitter voltage
(Base open)
VCEO
−50
Overall
Collector current
Total power dissipation
Junction temperature
Storage temperature
IC −100
PT 125
Tj 125
Tstg −55 to +125
Unit
V
V
mA
V
V
mA
mW
°C
°C
1: Emitter (Tr1)
2: Base (Tr1)
3: Collector (Tr2)
4: Emitter (Tr2)
5: Base (Tr2)
6: Collector (Tr1)
SSMini6-F1 Package
Marking Symbol: CB
Internal Connection
65
4
Tr1
Tr2
123
■ Electrical Characteristics Ta = 25°C ± 3°C
• Tr1
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 50 V
Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0
50 V
Collector-base cutoff current (Emitter open) ICBO VCB = 50 V, IE = 0
0.1 µA
Collector-emitter cutoff current (Base open) ICEO VCE = 50 V, IB = 0
0.5 µA
Emitter-base cutoff current (Collector open) IEBO VEB = 6 V, IC = 0
0.01 mA
Forward current transfer ratio
hFE VCE = 10 V, IC = 5 mA
160 460
Collector-emitter saturation voltage
VCE(sat) IC = 10 mA, IB = 0.3 mA
0.25 V
Output voltage high level
VOH VCC = 5 V, VB = 0.5 V, RL = 1 kΩ
4.9
V
Output voltage low level
VOL VCC = 5 V, VB = 2.5 V, RL = 1 kΩ
0.2 V
Input resistance
R1
−30% 10 +30% kΩ
Transition frequency
fT VCB = 10 V, IE = −2 mA, f = 200 MHz
150
MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: June 2003
SJJ00268BED
1
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government
if any of the products or technologies described in this material and controlled under the "Foreign
Exchange and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteris-
tics and applied circuits examples of the products. It neither warrants non-infringement of intellec-
tual property right or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the
product or technologies as described in this material.
(4) The products described in this material are intended to be used for standard applications or general
electronic equipment (such as office equipment, communications equipment, measuring instru-
ments and household appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
combustion equipment, life support systems and safety devices) in which exceptional quality and
reliability are required, or if the failure or malfunction of the products may directly jeopardize life or
harm the human body.
• Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without
notice for modification and/or improvement. At the final stage of your design, purchasing, or use of
the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that
the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
mum rating, the range of operating power supply voltage, and heat radiation characteristics. Other-
wise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of
incidence of break down and failure mode, possible to occur to semiconductor products. Measures
on the systems such as redundant design, arresting the spread of fire or preventing glitch are
recommended in order to prevent physical injury, fire, social damages, for example, by using the
products.
(7) When using products for which damp-proof packing is required, observe the conditions (including
shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets
are individually exchanged.
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
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UP04315 | Silicon NPN epitaxial planar type Silicon PNP epitaxial planar type | Panasonic Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |