|
|
|
부품번호 | UPA1428A 기능 |
|
|
기능 | NPN SILICON POWER TRANSISTOR ARRAY HIGH SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE | ||
제조업체 | NEC | ||
로고 | |||
전체 6 페이지수
DATA SHEET
SILICON TRANSISTOR ARRAY
µPA1428A
NPN SILICON POWER TRANSISTOR ARRAY
HIGH SPEED SWITCHING USE (DARLINGTON TRANSISTOR)
INDUSTRIAL USE
DESCRIPTION
The µPA1428A is NPN silicon epitaxial Darlington Power
Transistor Array that built in Surge Absorber 4 circuits
designed for driving solenoid, relay, lamp and so on.
FEATURES
• Surge Absorber built in.
• Easy mount by 0.1 inch of terminal interval.
• High hFE for Darlington Transistor.
ORDERING INFORMATION
Part Number
µPA1428AH
Package
10 Pin SIP
Quality Grade
Standard
Please refer to “Quality grade on NEC Semiconductor
Device” (Document number IEI-1209) published by NEC
Corporation to know the specification of quality grade on
the devices and its recommended applications.
ABSOLUTE MAXIMUM RATINGS (Ta = 25 ˚C)
Collector to Base Voltage VCBO 60 ±10 V
Collector to Emitter Voltage VCEO 60 ±10 V
Emitter to Base Voltage
VEBO
8
V
Surge Sustaining Energy ECEO(sus) 30 mJ/unit
Collector Current (DC)
IC(DC)
±2 A/unit
Collector Current (pulse)
IC(pulse)* ±3
A/unit
Base Current (DC)
IB(DC)
0.2 A/unit
Total Power Dissipation
PT1** 3.5
W
Total Power Dissipation
PT2*** 28
W
Junction Temperature Tj 150 ˚C
Storage Temperature
Tstg –55 to +150 ˚C
* PW ≤ 350 µs, Duty Cycle ≤ 2 %
** 4 Circuits, Ta = 25 ˚C
*** 4 Cuircuits, Tc = 25 ˚C
PACKAGE DIMENSION
(in millimeters)
26.8 MAX.
4.0
1.4 0.6 ±0.2
2.54
1.4
0.5 ±0.2
1 2 3 4 5 6 7 8 910
CONNECTION DIAGRAM
3 579
2 468
1 10
(C)
(B)
R1 R2
(E)
PIN NO.
2, 4, 6, 8: Base (B)
3, 5, 7, 9: Collector (C)
1, 10: Emitter (E)
R1 =.. 10 kΩ
R2 =.. 900 Ω
Document No. IC-3479
(O.D. No. IC-8359)
Date Published September 1994 P
Printed in Japan
The information in this document is subject to change without notice.
©
1994
COLLECTOR SATURATION
VOLTAGE vs. COLLECTOR CURRENT
10
IC /IB = 1000
Pulsed
Ta = –25 ˚C
25 ˚C
75 ˚C
125 ˚C
1
µPA1428A
BASE SATURATION VOLTAGE vs.
COLLECTOR CURRENT
10
Ta = –25 ˚C
IC /IB = 1000
Pulsed
25 ˚C
75 ˚C
125 ˚C
1
0.1
0.1
1
IC - Collector Current - A
10
SWITCHING TIME vs. COLLECTOR CURRENT
10
IC /IB = 500
1
0.1
0.1
tstg
tf
ton
1
IC - Collector Current - A
10
0.1
0.1
1
IC - Collector Current - A
10
DUMPER DIODE CHARACTERISTICS
100
10
1
100 m
10 m
0
1.0 1 3.0
VF(E-C) - Dumper Diode Voltage - V
4.0
4
4페이지 | |||
구 성 | 총 6 페이지수 | ||
다운로드 | [ UPA1428A.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
UPA1428 | NPN SILICON POWER TRANSISTOR ARRAY HIGH SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE | NEC |
UPA1428A | NPN SILICON POWER TRANSISTOR ARRAY HIGH SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE | NEC |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |