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부품번호 | UPA1458 기능 |
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기능 | NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE | ||
제조업체 | NEC | ||
로고 | |||
전체 6 페이지수
DATA SHEET
SILICON TRANSISTOR ARRAY
µPA1458
NPN SILICON POWER TRANSISTOR ARRAY
LOW SPEED SWITCHING USE (DARLINGTON TRANSISTOR)
INDUSTRIAL USE
DESCRIPTION
The µPA1458 is NPN silicon epitaxial Darlington
Power Transistor Array that built in Surge Absorber and
4 circuits designed for driving solenoid, relay, lamp and
so on.
PACKAGE DIMENSION
(in millimeters)
26.8 MAX.
4.0
FEATURES
• Surge Absorber (C - B) built in.
• Easy mount by 0.1 inch of terminal interval.
• High hFE for Darlington Transistor.
ORDERING INFORMATION
1.4 0.6 ±0.1
2.54
1.4
0.5 ±0.1
Part Number
µPA1458H
Package
10 Pin SIP
Quality Grade
Standard
Please refer to "Quality grade on NEC Semiconductor Devices"
(Document number IEI-1209) published by NEC Corporation to
know the specification of quality grade on the devices and its
recommended applications.
1 2 3 4 5 6 7 8 9 10
CONNECTION DIAGRAM
3579
2468
ABSOLUTE MAXIMUM RATINGS (Ta = 25 ˚C)
Collector to Base Voltage
VCBO 60 ±10
V
Collector to Emitter Voltage VCEO 60 ±10 V
Emitter to Base Voltage
VEBO
7
V
Surge Sustaining Energy
ECEO(sus) 25 mJ/unit
Collector Current (DC)
IC(DC)
±5 A/unit
Collector Current (pulse)
IC(pulse)* ±10 A/unit
Collector Current
ICBS(DC) 5 mA/unit
Base Current (DC)
IB(DC)
0.5 A/unit
Total Power Dissipation
PT1** 3.5
W
Total Power Dissipation
PT2*** 28
W
Junction Temperature
Tj 150 ˚C
Storage Temperature
Tstg –55 to +150 ˚C
* PW ≤ 300 µs, Duty Cycle ≤ 10 %
** 4 Circuits, Ta = 25 ˚C
*** 4 Circuits, Tc = 25 ˚C
1
(B)
(C)
R1 R2
(E)
10
PIN No.
2, 4, 6, 8: Base (B)
3, 5, 7, 9: Collector (C)
1, 10 : Emitter (E)
R1 =.. 3.0 kΩ
R2 =.. 300 Ω
Document No. IC-3523
(O. D. No. IC-6342)
Date Published September 1994 P
Printed in Japan
The information in this document is subject to change without notice.
©
1994
TRANSIENT THERMAL RESISTANCE
100
VCE ≤ 10 V
10
1.0
0.1
0.1
1 10
PW - Pulse Width - ms
100
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
5
1.4 1.0
0.8
4 0.6
0.4
3
2
IB = 0.2 mA
1
0 12345
VCE - Collector to Emitter Voltage - V
µPA1458
BASE SATURATION VOLTAGE vs.
COLLECTOR CURRENT
10
IC = 1000·IB
Pulse Test
1
0.1
0.1
Ta = –25 ˚C
25 ˚C
75 ˚C
125 ˚C
1
IC - Collector Current - A
10
4
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
UPA1452H | NPN SILICON EPITAXIAL POWER TRANSISTOR ARRAY HIGH SPEED SWITCHING | NEC |
UPA1453 | PNP SILICON POWER TRANSISTOR ARRAY HIGH SPEED SWITCHING USE INDUSTRIAL USE | NEC |
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