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부품번호 | UPA1520B 기능 |
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기능 | N-CHANNEL POWER MOS FET ARRAY SWITCHING USE | ||
제조업체 | NEC | ||
로고 | |||
DATA SHEET
Compound Field Effect Power Transistor
µPA1520B
N-CHANNEL POWER MOS FET ARRAY
SWITCHING USE
DESCRIPTION
The µPA1520B is N-channel Power MOS FET Array that
built in 4 circuits designed for solenoid, motor and lamp
driver.
FEATURES
• 4 V driving is possible
• Large Current and Low On-state Resistance
ID (DC) = ±2.0 A
RDS (on) 1 ≤ 0.17 Ω MAX. (VGS = 10 V, ID = 1 A)
RDS (on) 1 ≤ 0.25 Ω MAX. (VGS = 4 V, ID = 1 A)
• Low Input Capacitance Ciss = 220 pF TYP.
ORDERING INFORMATION
PACKAGE DIMENSIONS
in millimeters
26.8 MAX.
4.0
1.4 0.6±0.1
2.54
1 2 3 4 5 6 7 8 910
1.4
0.5±0.1
Type Number
µPA1520BH
Package
10 Pin SIP
CONNECTION DIAGRAM
3579
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage VDSSNote 1
30
V
Gate to Source Voltage VGSSNote 2
±20
V
Drain Current (DC)
ID(DC)
±2.0 A/unit
Drain Current (pulse)
ID(pulse)Note 3
±8.0
A/unit
Total Power Dissipation PT1Note 4
Total Power Dissipation PT2Note 5
28 W
3.5 W
Channel Temperature TCH
150 °C
Storage Temperature
Tstg
–55 to +150 °C
24 68
1
ELECTRODE CONNECTION
2, 4, 6, 8 : Gate
3, 5, 7, 9 : Drain
1, 10 : Source
10
Notes 1. VGS = 0
3. PW ≤ 10 µs, Duty Cycle ≤ 1 %
3. 4 circuits, TA = 25 °C
2. VDS = 0
4. 4 circuits, TC = 25 °C
The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
Document No. G10598EJ2V0DS00 (2nd edition)
Date Published December 1995 P
Printed in Japan
© 1995
µPA1520B
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1 000 Single Pulse.
For each Circuit
Rth(CH-A) 4Circuits
3Circuits
2Circuits
1Circuit
100
Rth(CH-C)
10
1.0
0.1
100µ
1m
10 m
100 m
1
10
PW - Pulse Width - sec
100 1 000
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100 VDS = 10 V
Pulsed
TA = -25 °C
10 25 °C
75 °C
125 °C
1.0
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
300 Pulsed
ID = 0.4 A
200
1A
2A
100
0.1
0.1 1.0 10
ID- Drain Current - A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
300 Pulsed
200
VGS = 4 V
100
VGS = 10 V
0
1.0
10
ID - Drain Current - A
0 10 20
VGS - Gate to Source Voltage - V
GATE TO SOURCE CUTOFF VOLTAGE vs.
CHANNEL TEMPERATURE
VDS = 10 V
2 ID = 1 mA
1
0
- 50 0 50 100 150
TCH - Channel Temperature - °C
4
4페이지 [MEMO]
µPA1520B
7
7페이지 | |||
구 성 | 총 8 페이지수 | ||
다운로드 | [ UPA1520B.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
UPA1520B | N-CHANNEL POWER MOS FET ARRAY SWITCHING USE | NEC |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |