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PDF UPA1572B Data sheet ( Hoja de datos )
| Número de pieza | UPA1572B | |
| Descripción | N-CHANNEL POWER MOS FET ARRAY SWITCHING INDUSTRIAL USE | |
| Fabricantes | NEC | |
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DATA SHEET
Compound Field Effect Power Transistor
µPA1572B
N-CHANNEL POWER MOS FET ARRAY
SWITCHING
INDUSTRIAL USE
DESCRIPTION
The µPA1572B is N-channel Power MOS FET Array
that built in 4 circuits designed for solenoid, motor and
lamp driver.
FEATURES
• Full Mold Package with 4 Circuits
• 4 V driving is possible
• Low On-state Resistance
RDS(on) = 0.6 Ω MAX. (VGS = 10 V, ID = 1 A)
RDS(on) = 0.8 Ω MAX. (VGS = 4 V, ID = 1 A)
• Low Input Capacitance Ciss = 110 pF TYP.
ORDERING INFORMATION
Type Number
Package
µPA1572BH
10Pin SIP
PACKAGE DIMENSIONS
in millimeters
26.8 MAX.
4.0
1.4 0.6±0.1
2.54
1.4
0.5±0.1
1 2 3 4 5 6 7 8 910
CONNECTION DIAGRAM
3579
2468
1 10
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage (VGS = 0) VDSS
60 V
Gate to Source Voltage (VDS = 0) VGSS (AC) ±20 V
Drain Current (DC)
ID (DS)
±2.0 A/unit
Drain Current (pulse)
ID (pulse) *1 ±6.0 A/unit
Total Power Dissipation
PT1 *2
20 W
Total Power Dissipation
PT2 *3
3.0 W
Channel Temperature
TCH 150 °C
Storage Tempreature
Tstg −55 to +150°C
Single Avalanche Current
IAS *4
5.0 A
Single Avalanche Energy
EAS *4
0.1 mJ
ELECTRODE CONNECTION
2, 4, 6, 8 : Gate
3, 5, 7, 9 : Drain
1, 10 : Source
*1 PW ≤ 10 µs, Duty Cycle ≤ 1 % *2 4 Circuits TC = 25 °C
*3 4 Circuits TA = 25 °C
*4 Starting TCH = 25 °C, VDD = 30 V, VGS = 20 V → 0, RG = 25 Ω, L = 100 µH
Build-in Gate Diodes are for protection from static electricity in handing.
In case high voltage over VGSs is applied, please append gate protection circuits.
The information in this document is subject to change without notice.
Document No. G11177EJ1V0DS00 (1st edition)
Date Published May 1996 P
Printed in Japan
© 1996
1 page  
µPA1572B
10 000
1 000
100
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
Rth (CH-A) 4Circuits
3Circuits
2Circuits
1Circuit
10
1.0
0.1
100µ 1 m
10 m
100 m
1
For Each Circuit,
Single Pulse
10 100 1 000
PW - Pulse Width - s
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
10
TA=-25°C
25°C
75°C
125°C
VDS=10V
Pulsed
1.0
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
1.5 Pulsed
ID= 2 A
1.0
1A
0.4 A
0.5
0.1
0.01
0.1 1.0
ID- Drain Current - A
10
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
2.0
Pulsed
0 10 20
VGS - Gate to Source Voltage - V
GATE TO SOURCE CUTOFF VOLTAGE vs.
CHANNEL TEMPERATURE
VDS = 10 V
2 ID = 1 mA
1.0
VGS=4V
VGS=10V
0
0.1
1.0 10
ID - Drain Current - A
1
0
− 50
0 50 100 150
TCH - Channel Temperature - °C
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet UPA1572B.PDF ] | |
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