UPA1700A Datasheet PDF - NEC
| Part Number | UPA1700A | |
| Description | SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE | |
| Manufacturers | NEC | |
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DATA SHEET
MOS FIELD EFFECT POWER TRANSISTORS
µPA1700A
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
This product is N-Channel MOS Field Effect
Transistor designed for DC/DC converters and power
management of notebook computers.
FEATURES
• Low On-Resistance
RDS(on)1 = 27 mΩ Max. (VGS = 10 V, ID = 3.5 A)
RDS(on)2 = 50 mΩ Max. (VGS = 4 V, ID = 3.5 A)
• Low Input Capacitance
Ciss = 820 pF Typ.
• Built-in G-S Protection Diode
• Small and Surface Mount Package
(Power SOP8)
PACKAGE DIMENSIONS
(in millimeter)
85
14
5.37 MAX.
1, 2, 3 ; Source
4 ; Gate
5, 6, 7, 8; Drain
6.0 ±0.3
4.4
0.8
1.27 0.78 MAX.
0.40
+0.10
–0.05
0.12 M
0.5 ±0.2
0.10
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C, all terminals are connected)
Drain to Source Voltage
VDSS
30
V
Drain
Gate to Source Voltage
VGSS
±20
V
Drain Current (DC)
Drain Current (pulse)Note 1
ID(DC)
ID(pulse)
±7.0
±28
A
A Gate
Body
Diode
Total Power Dissipation (TA = 25 °C)Note 2
Channel Temperature
Storage Temperature
PT
Tch
Tstg
2.0
150
–55 to +150
W
˚C
˚C
Gate
Protection
Diode Source
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 %
2. Mounted on ceramic substrate of 1200 mm2 × 1.7 mm
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this
device acutally used, an additional protection circuit is externally required if voltage exceeding the rated voltage may
be applied to this device.
The information in this document is subject to change without notice.
Document No. G12008EJ1V0DS00 (1st edition)
Date Published April 1997 N
Printed in Japan
©
1996
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DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
40
VGS = 4 V
30
20
10 V
10
0 ID = 3.5 A
–20 0 20 40 60 80 100 120
Tch - Channel Temperature - °C
10 000
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VGS = 0
f = 1 MHz
1 000
100
Ciss
Coss
Crss
10
0.1
1 10
VDS - Drain to Source Voltage - V
100
1 000
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
di/dt = 100 A/ µs
VGS = 0
100
10
1
0.1
1 10
IF - Diode Current - A
100
µPA1700A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
Pulsed
100
10
VGS = 10 V
VGS = 0
1
0.1
0
0.5 1.0
VSD - Source to Drain Voltage - V
1.5
1 000
100
10
SWITCHING CHARACTERISTICS
tr
td(off)
tf
td(on)
VDD = 15 V
VGS(on) = 10 V
1 RG = 10 Ω
0.1 1 10 100
ID - Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
40
ID = 7 A
14
30 12
VDD = 24 V
VGS
20 15 V
6V
10
8
6
10 4
2
VDS
0
0 5 10 15 20
QG - Gate Charge - nC
5
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