|
|
PDF UPA1705 Data sheet ( Hoja de datos )
| Número de pieza | UPA1705 | |
| Descripción | SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE | |
| Fabricantes | NEC | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de UPA1705 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
|
No Preview Available !
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µPA1705
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
This product is N-Channel MOS Field Effect Transistor
designed for DC/DC Converters and power management
application of notebook computers.
FEATURES
• Super low on-state resistance
RDS(on)1 = 19.0 mΩ TYP. (VGS = 10 V, ID = 4.0 A)
RDS(on)2 = 30.0 mΩ TYP. (VGS = 4.5 V, ID = 4.0 A)
• Low Ciss : Ciss = 750 pF TYP.
• Built-in G-S protection diode
• Small and surface mount package (Power SOP8)
PACKAGE DRAWING (Unit : mm)
85
1, 2, 3 ; Source
4 ; Gate
5, 6, 7, 8 ; Drain
14
5.37 Max.
6.0 ±0.3
4.4
1.27 0.78 Max.
0.40
+0.10
–0.05
0.12 M
0.5 ±0.2
0.8
0.10
ORDERING INFORMATION
PART NUMBER
µPA1705G
PACKAGE
Power SOP8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, All terminals are connected.)
Drain to Source Voltage (VGS = 0)
VDSS 30 V
Gate to Source Voltage (VDS = 0)
VGSS ±25 V
Drain Current (DC)
ID(DC) ±8 A
Drain Current (Pulse) Note1
ID(pulse)
±50
A
Total Power Dissipation (TA = 25 °C) Note2
PT
2.0 W
EQUIVALENT CIRCUIT
Drain
Channel Temperature
Storage Temperature
Tch 150 °C
Tstg –55 to + 150 °C
Gate
Body
Diode
Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1 %
2. Mounted on ceramic substrate of 1200 mm2 x 1.7 mm
Gate
Protection
Diode
Source
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
Exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. G12712EJ1V0DS00 (1st edition)
Date Published February 1999 NS CP(K)
Printed in Japan
©
1998, 1999
1 page  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
50
40 VGS = 4.5 V
30
20 VGS = 10 V
10
ID = 4 A
0
–20 0 20 40 60 80 100 120 140 160
Tch - Channel Temperature - ˚C
1 000 0
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VDS = 10 V
VGS = 0 V
f = 1 MHz
1 000
100
Ciss
Coss
Crss
10
0.1
1 10
VGS - Drain to Source Voltage - V
100
1 000
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
di/dt = 100 A/ µs
VGS = 0
100
10
1
0.1
1 10
IF - Diode Current - A
100
µPA1705
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
Pulsed
100
10
VGS = 0 V
1
0.1
0
0.5 1.0
VSD - Source to Drain Voltage - V
1.5
1 000
100
10
SWITCHING CHARACTERISTICS
tr
td(off)
tf
td(on)
VDD = 15 V
VGS(on) = 10 V
1 RG = 10 Ω
0.1 1 10 100
ID - Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
40
ID = 8 A
14
30 12
VDD = 24 V
VGS
15 V
20 6 V
10
8
6
10 4
2
VDS
0
0 5 10 15 20
QG - Gate Charge - nC
Data Sheet G12712EJ1V0DS00
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet UPA1705.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| UPA1700A | SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE | NEC |
| UPA1701A | SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE | NEC |
| UPA1703 | SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE | NEC |
| UPA1704 | SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE | NEC |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |