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부품번호 | UPA1708 기능 |
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기능 | SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE | ||
제조업체 | NEC | ||
로고 | |||
전체 8 페이지수
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA1708
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
This product is N-Channel MOS Field Effect Transistor
designed for DC/DC converters and power management
switch.
FEATURES
• Low on-resistance
RDS(on)1 = 18.0 mΩ (TYP.) (VGS = 10 V, ID = 3.5 A)
RDS(on)2 = 28.0 mΩ (TYP.) (VGS = 4.5 V, ID = 3.5 A)
• Low Ciss : Ciss = 730 pF (TYP.)
• Built-in G-S protection diode
• Small and surface mount package (Power SOP8)
ORDERING INFORMATION
PART NUMBER
PACKAGE
µPA1708G
Power SOP8
PACKAGE DRAWINGS (Unit : mm)
85
1,2,3 ; Source
4 ; Gate
5,6,7,8 ; Drain
14
5.37 MAX.
6.0 ±0.3
4.4
0.8
1.27 0.78 MAX.
0.40
+0.10
–0.05
0.12 M
0.5 ±0.2
0.10
EQUIVARENT CIRCUIT
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected)
Drain to Source Voltage Note1
VDSS 40 V
Gate to Source Voltage Note2
VGSS ±25 V
Drain Current (DC)
Drain Current (pulse) Note3
Total Power Dissipation (TA = 25°C) Note4
ID(DC)
ID(pulse)
PT
±7.0
±28
2.0
A
A
W
Channel Temperature
Tch 150 °C
Storage Temperature
Tstg –55 to + 150 °C
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Notes 1. VGS = 0 V
2. VDS = 0 V
3. PW ≤ 10 µs, Duty Cycle ≤ 1 %
4. Mounted on ceramic substrate of 1200 mm2 x 1.7mm
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice.
Document No. G13603EJ1V0DS00 (1st edition)
Date Published November 1998 NS CP(K)
Printed in Japan
©
1998
µ PA1708
1 000
100
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
Rth(ch-a) = 62.5˚C/W
10
1
0.1
0.01
0.001
100 µ
1m
10 m
100 m
1
Mounted on ceramic
substrate of 1200mm2 × 1.7mm
Single Pulse
10 100 1 000 10 000
PW - Pulse Width - s
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100 VDS =10 V
Pulsed
TA = −50˚C
10 −25˚C
25˚C
1
75˚C
125˚C
150˚C
0.1 1 10 100
ID- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
70 Pulsed
60
50
40
30
20 ID = 3.5 A
10
0 5 10 15
VGS - Gate to Source Voltage - V
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
80
Pulsed
70
60
50
40 VGS = 4.5 V
30
20 10 V
10
01
10 100
ID - Drain Current - A
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
VDS = 10 V
4 ID = 1 mA
3
2
1
0
-50 0 50 100 150
Tch - Channel Temperature - ˚C
4
4페이지 [MEMO]
µ PA1708
7
7페이지 | |||
구 성 | 총 8 페이지수 | ||
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