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부품번호 | UPA1709 기능 |
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기능 | SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE | ||
제조업체 | NEC | ||
로고 | |||
전체 8 페이지수
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA1709
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
This product is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management
switch.
FEATURES
• Low on-resistance
RDS(on)1 = 9.3 mΩ (TYP.) (VGS = 10 V, ID = 4.5 A)
RDS(on)2 = 13.8 mΩ (TYP.) (VGS = 4.5 V, ID = 4.5 A)
• Low Ciss : Ciss = 1850 pF (TYP.)
• Built-in G-S protection diode
• Small and surface mount package (Power SOP8)
ORDERING INFORMATION
PART NUMBER
PACKAGE
µ PA1709G
Power SOP8
PACKAGE DRAWING (Unit : mm)
85
14
5.37 Max.
1,2,3 ; Source
4 ; Gate
5,6,7,8 ; Drain
6.0 ±0.3
4.4
1.27 0.78 Max.
0.40
+0.10
–0.05
0.12 M
0.5 ±0.2
0.8
0.10
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.)
Drain to Source Voltage (VGS = 0 V)
VDSS
40
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±25
V
Drain Current (DC)
Drain Current (pulse) Note1
Total Power Dissipation (TA = 25°C) Note2
ID(DC)
ID(pulse)
PT
±9.0
±36
2.0
A
A
W
Channel Temperature
Tch 150
°C
Storage Temperature
Tstg –55 to + 150
°C
Notes 1. PW ≤ 10 µ s, Duty Cycle ≤ 1 %
2. Mounted on ceramic substrate of 1200 mm2 x 0.7 mm
EQUIVARENT CIRCUIT
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
Document No. G13436EJ1V0DS00 (1st edition)
Date Published November 1998 NS CP(K)
Printed in Japan
© 1998
µ PA1709
1 000
100
10
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
Rth(CH-A) = 62.5 ˚C/W
1
0.1
0.01
0.001
10
100
Mounted on ceramic
substrate of 1200 mm2 0.7 mm
Single Pulse
1 m 10 m 100 m 1
10 100 1 000
PW - Pulse Width - s
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100 Pulsed
TA = -50 ˚C
-25 ˚C
25 ˚C
10
75 ˚C
1 125 ˚C
150 ˚C
0.1 VDS = 0 V
0.1 1 10 100
ID- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
Pulsed
60
40
20
ID = 4.5 A
0 5 10
VGS - Gate to Source Voltage - V
15
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
40 Pulsed
30
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
VDS = 10 V
2.6 ID = 1 mA
20
VGS = 4.5 V
10
10 V
01
10 100
ID - Drain Current - A
1.8
1.0
-40 0 40 80 120
Tch - Channel Temperature - ˚C
4
4페이지 [MEMO]
µ PA1709
7
7페이지 | |||
구 성 | 총 8 페이지수 | ||
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