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부품번호 | UPA1715 기능 |
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기능 | SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE | ||
제조업체 | NEC | ||
로고 | |||
전체 8 페이지수
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA1715
SWITCHING
P-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
This product is P-Channel MOS Field Effect Transistor designed for power management applications of notebook
computers and Li-ion battery protection circuit.
FEATURES
• Low on-resistance
RDS(on)1 = 8.5 mΩ TYP. (VGS = –10 V, ID = –6.0 A)
RDS(on)2 = 11.0 mΩ TYP. (VGS = –4.5 V, ID = –6.0 A)
RDS(on)3 = 12.0 mΩ TYP. (VGS = –4.0 V, ID = –6.0 A)
• Low Ciss : Ciss = 3800 pF TYP.
• Built-in G-S protection diode
• Small and surface mount package (Power SOP8)
ORDERING INFORMATION
PART NUMBER
PACKAGE
µ PA1715G
Power SOP8
PACKAGE DRAWING (Unit : mm)
85
14
5.37 Max.
1,2,3 ; Source
4 ; Gate
5,6,7,8 ; Drain
6.0 ±0.3
4.4
0.8
1.27 0.78 Max.
0.40
+0.10
–0.05
0.12 M
0.5 ±0.2
0.10
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC)
Drain Current (pulse) Note1
Total Power Dissipation (TA = 25°C) Note2
VDSS
VGSS
ID(DC)
ID(pulse)
PT
–30
# 20
#11
# 44
2.0
V
V
A
A
W
Channel Temperature
Tch 150
°C
Storage Temperature
Tstg –55 to +150
°C
EQUIVARENT CIRCUIT
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Notes 1. PW ≤ 10 µ s, Duty Cycle ≤ 1 %
2. Mounted on ceramic substrate of 1200 mm2 x 0.7 mm
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. G13669EJ1V0DS00 (1st edition)
Date Published March 1999 NS CP(K)
Printed in Japan
©
1998, 1999
µ PA1715
FORWARD TRANSFER CHARACTERISTICS
−100
Pulsed
TA = −50˚C
−10 −25˚C
25˚C
75˚C
125˚C
150˚C
−1
−0.1
0
−1.0
−2.0
VDS = −10 V
−3.0
−4.0
VGS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
TA = −50˚C
−25˚C
25˚C
75˚C
125˚C
10 150˚C
VDS = −10 V
Pulsed
1
−0.1
−1 −10
ID- Drain Current - A
−100
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
20 Pulsed
15 VGS = −4 V
−4.5 V
10
−10 V
5
−1
−10 −100
ID - Drain Current - A
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
−50
VGS = −10 V
−40 −4.5 V
−4 V
−30
Pulsed
−20
−10
0
−0.2
−0.4 −0.6 −0.8
VDS - Drain to Source Voltage - V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
Pulsed
30
20
ID = −11 A
−6 A
10
0 −5 −10 −15
VGS - Gate to Source Voltage - V
GATE TO SOURCE CUTOFF VOLTAGE vs.
CHANNEL TEMPERATURE
−2.0
VDS = −10 V
ID = −1 mA
−1.5
−1.0
−0.5
0
−50 0 50 100 150
Tch - Channel Temperature - ˚C
4 Data Sheet G13669EJ1V0DS00
4페이지 [MEMO]
µ PA1715
Data Sheet G13669EJ1V0DS00
7
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부품번호 | 상세설명 및 기능 | 제조사 |
UPA1715 | SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE | NEC |
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DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |