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부품번호 | UPA1717 기능 |
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기능 | SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE | ||
제조업체 | NEC | ||
로고 | |||
전체 8 페이지수
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA1717
SWITCHING
P-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The µPA1717 is P-Channel MOS Field Effect
Transistor designed for power management
applications of notebook computers.
FEATURES
• Low on-state resistance
RDS(on)1 = 33 mΩ MAX. (VGS = −10 V, ID = −3 A)
RDS(on)2 = 59 mΩ MAX. (VGS = −4.5 V, ID = −3 A)
• Low Ciss : Ciss = 830 pF TYP.
• Built-in G-S protection diode
• Small and surface mount package (Power SOP8)
ORDERING INFORMATION
PART NUMBER
PACKAGE
µPA1717G
Power SOP8
PACKAGE DRAWING (Unit : mm)
85
1,2,3 ; Source
4 ; Gate
5,6,7,8 ; Drain
14
5.37 MAX.
6.0 ±0.3
4.4
0.8
1.27 0.78 MAX.
0.40
+0.10
–0.05
0.12 M
0.5 ±0.2
0.10
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.)
Drain to Source Voltage (VGS = 0 V)
VDSS −30 V
Gate to Source Voltage (VDS = 0 V)
VGSS
# 25 V
Drain Current (DC)
Drain Current (pulse) Note1
Total Power Dissipation (TA = 25°C) Note2
ID(DC)
ID(pulse)
PT
#6
# 24
2.0
A
A
W
Channel Temperature
Tch 150 °C
Storage Temperature
Tstg –55 to +150 °C
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 %
2. Mounted on ceramic substrate of 1200 mm2 x 2.2 mm
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. G14047EJ1V0DS00 (1st edition)
Date Published June 2000 NS CP(K)
Printed in Japan
©
1999, 2000
FORWARD TRANSFER CHARACTERISTICS
−100
VDS = −10 V
−10
TA = 150˚C
75˚C
−1
25˚C
−25˚C
−0.1
−0.01
−0.001 0
Pulsed
−1 −2 −3 −4
VGS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
VDS = −10 V
Pulsed
TA = −25˚C
25˚C
10 75˚C
150˚C
1
0.1
−0.1
−1 −10
ID- Drain Current - A
−100
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
100
Pulsed
80
60
VGS = −4.5 V
40
−10 V
20
0
–0.1
–1 –10 –100
ID - Drain Current - A
– 1000
µ PA1717
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
−30
Pulsed
−25
VGS = −10 V
−20
−4.5 V
−15
−10
−5
0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2
VDS - Drain to Source Voltage - V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
80 Pulsed
70
60 ID = −6 A
50 −3 A
40
30
20
10
0 −5 −10 −15
VGS - Gate to Source Voltage - V
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
−3.0
−2.5
VDS = −10 V
ID = −1 mA
−2.0
−1.5
−1.0
−0.5
0
−50 0 50 100 150
Tch - Channel Temperature - ˚C
4 Data Sheet G14047EJ1V0DS00
4페이지 [MEMO]
µ PA1717
Data Sheet G14047EJ1V0DS00
7
7페이지 | |||
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DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |