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부품번호 | UPA1720 기능 |
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기능 | SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE | ||
제조업체 | NEC | ||
로고 | |||
전체 8 페이지수
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA1720
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The µ PA1720 is N-Channel MOS Field Effect Transistor designed for DC / DC Converters and power management
application of notebook computers.
FEATURES
• Low On-Resistance
RDS(on)1 = 25.0 mΩ MAX. (VGS = 10 V, ID = 4.0 A)
RDS(on)2 = 33.0 mΩ MAX. (VGS = 4.5 V, ID = 4.0 A)
RDS(on)3 = 38.0 mΩ MAX. (VGS = 4.0 V, ID = 4.0 A)
• Low Ciss : Ciss = 800 pF TYP.
• Built-in G-S Protection Diode
• Small and Surface Mount Package (Power SOP8)
ORDERING INFORMATION
PART NUMBER
PACKAGE
µ PA1720G
Power SOP8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, All terminals are connected.)
Drain to Source Voltage (VGS = 0)
VDSS
30
V
Gate to Source Voltage (VDS = 0)
VGSS
±20
V
Drain Current (DC)
Drain Current (Pulse) Note1
Total Power Dissipation (TA = 25 °C) Note2
Single Avalanche Current Note3
Single Avalanche Energy Note3
ID(DC)
ID(pulse)
PT
IAS
EAS
±8
±32
2.0
8.0
6.4
A
A
W
A
mJ
Channel Temperature
Tch 150 °C
Storage Temperature
Tstg –55 to + 150 °C
Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1 %
2. Mounted on ceramic substrate of 1200 mm2 x 2.2 mm
3. Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V → 0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. G13888EJ2V0DS00 (2nd edition)
Date Published March 2000 NS CP(K)
Printed in Japan
The mark 5 shows major revised points.
©
1998, 1999
FORWARD TRANSFER CHARACTERISTICS
100 Pulsed
10
TA = 150˚C
75˚C
1 25˚C
−25˚C
0.1
0
VDS = 10 V
123456
VGS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
TA = −25˚C
10 25˚C
75˚C
150˚C
1
0.1
0.01
VDS =10 V
Pulsed
0.1 1 10 100
ID- Drain Current - A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
100
Pulsed
80
VGS = 4.0 V
60
5
40
4.5 V
10 V
20
0
0.1 1 10 100
ID - Drain Current - A
µ PA1720
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
Pulsed
30
VGS = 10 V
20
4.5 V
4.0 V
10
0
0.0 0.4 0.8 1.2 1.6
VDS - Drain to Source Voltage - V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
100
Pulsed
80
ID = 4 A
8A
60
40
20
0
0 5 10 15
VGS - Gate to Source Voltage - V
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
3.0
VDS = 10 V
ID = 1 mA
2.0
1.0
0.0
−50
0 50 100
Tch - Channel Temperature - ˚C
150
4 Data Sheet G13888EJ2V0DS00
4페이지 PACKAGE DRAWING (Unit : mm)
Power SOP8
8
5
1 ; Non Connect
2, 3 ; Source
4 ; Gate
5, 6, 7, 8 ; Drain
14
5.37 Max.
6.0 ±0.3
4.4
0.8
1.27 0.78 Max.
0.40
+0.10
–0.05
0.12 M
0.5 ±0.2
0.10
µ PA1720
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
Exceeding the rated voltage may be applied to this device.
Data Sheet G13888EJ2V0DS00
7
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부품번호 | 상세설명 및 기능 | 제조사 |
UPA1720 | SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE | NEC |
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