Datasheet.kr   

UPA1725 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 UPA1725
기능 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
제조업체 NEC
로고 NEC 로고 



전체 8 페이지

		

No Preview Available !

UPA1725 데이터시트, 핀배열, 회로
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA1725
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
This µPA1725 is N-Channel MOS Field Effect Transistor
designed for power management applications of
notebook computers and so on.
FEATURES
2.5-V gate drive and low on-resistance
RDS(on)1 = 21.0 mMAX. (VGS = 4.5 V, ID = 3.5 A)
RDS(on)2 = 22.0 mMAX. (VGS = 4.0 V, ID = 3.5 A)
RDS(on)3 = 30.0 mMAX. (VGS = 2.5 V, ID = 3.5 A)
Low Ciss : Ciss = 950 pF TYP.
Built-in G-S protection diode
Small and surface mount package (Power SOP8)
ORDERING INFORMATION
PART NUMBER
PACKAGE
µPA1725G
Power SOP8
PACKAGE DRAWING (Unit : mm)
85
1, ; Non connection
2,3 ; Source
4 ; Gate
5,6,7,8 ; Drain
14
5.37 MAX.
6.0 ±0.3
4.4
0.8
1.27 0.78 MAX.
0.40
+0.10
–0.05
0.12 M
0.5 ±0.2
0.10
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
VDSS 20 V
VGSS ±12 V
EQUIVALENT CIRCUIT
Drain Current (DC)
ID(DC) ±7 A
Drain Current (pulse) Note1
ID(pulse)
±28
A
Total Power Dissipation (TA = 25°C) Note2
PT
2.0 W
Channel Temperature
Tch 150 °C
Gate
Drain
Body
Diode
Storage Temperature
Tstg –55 to + 150
Notes 1. PW 10 µs, Duty Cycle 1 %
2. Mounted on ceramic substrate of 1200 mm2 x 2.2mm
°C
Gate
Protection
Diode
Source
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. G14049EJ1V0DS00 (1st edition)
Date Published January 2000 NS CP(K)
Printed in Japan
The mark shows major revised points.
©
1999, 2000




UPA1725 pdf, 반도체, 판매, 대치품
µ PA1725
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
VDS = 10 V
Pulsed
10
TA = 25˚C
25˚C
75˚C
125˚C
1
0.1
0.001
0.01 0.1
1
10
ID- Drain Current - A
100
10 000
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VGS = 0 V
f = 1 MHz
1 000
100
Ciss
Coss
Crss
10
0.01
0.1 1 10
VDS - Drain to Source Voltage - V
100
1 000
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
di/dt =100 A/µs
VGS = 0 V
100
10
1
0.1
1 10
ID - Drain Current - A
100
1000
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
Pulsed
100
VGS = 4.0 V
10
0V
1
0.1
0
0.4 0.8 1.2 1.6
VSD - Source to Drain Voltage - V
2.0
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
30 12
ID = 7 A
VDD = 16 V
10 V
4V
10
20 8
VGS
10
6
4
2
VDS
0
05
10 15 20 25 30
QG - Gate Charge - nC
4 Data Sheet G14049EJ1V0DS00

4페이지










UPA1725 전자부품, 판매, 대치품
[MEMO]
µ PA1725
Data Sheet G14049EJ1V0DS00
7

7페이지



구       성총 8 페이지
다운로드[ UPA1725.PDF 데이터시트 ]
구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

전력 반도체 판매 ( IGBT, TR 모듈, SCR, 다이오드 모듈 )

휴대전화 : 010-3582-2743


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877, [ 홈페이지 ]



링크공유

링크 :

관련 데이터시트

부품번호상세설명 및 기능제조사
UPA1720

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

NEC
NEC
UPA1721

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

NEC
NEC

DataSheet.kr    |   2019   |  연락처   |  링크모음   |   검색  |   사이트맵