|
|
Número de pieza | UPA1730 | |
Descripción | SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE | |
Fabricantes | NEC | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de UPA1730 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA1730
SWITCHING
P-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The µ PA1730 is P-Channel MOS Field Effect Transis-
tor designed for power management applications of
notebook computers and Li-ion battery protection circuit.
FEATURES
• Low on-resistance
RDS(on)1 = 9.5 mΩ MAX. (VGS = –10 V, ID = –6.5 A)
RDS(on)2 = 13.5 mΩ MAX. (VGS = –4.5 V, ID = –6.5 A)
5 RDS(on)3 = 15.0 mΩ MAX. (VGS = –4.0 V, ID = –6.5 A)
• Low Ciss : Ciss = 3800 pF TYP.
• Built-in G-S protection diode
• Small and surface mount package (Power SOP8)
ORDERING INFORMATION
PART NUMBER
PACKAGE
µ PA1730G
Power SOP8
PACKAGE DRAWING (Unit : mm)
85
1,2,3 ; Source
4 ; Gate
5,6,7,8 ; Drain
14
5.37 MAX.
6.0 ±0.3
4.4
0.8
1.27 0.78 MAX.
0.40
+0.10
–0.05
0.12 M
0.5 ±0.2
0.10
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.)
Drain to Source Voltage (VGS = 0 V)
VDSS –30 V
Gate to Source Voltage (VDS = 0 V)
VGSS
# 20
V
Drain Current (DC)
Drain Current (pulse) Note1
Total Power Dissipation (TA = 25°C) Note2
ID(DC)
ID(pulse)
PT
# 13.0
# 52.0
2.2
A
A
W
Channel Temperature
Tch 150 °C
Storage Temperature
Tstg –55 to +150 °C
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 %
2. Mounted on ceramic substrate of 1200 mm2 x 2.2 mm
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. G14284EJ1V0DS00 (1st edition)
Date Published November 1999 NS CP(K)
Printed in Japan
The mark 5 shows major revised points.
©
1999
1 page µ PA1730
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
Pulsed
20
18
VGS = −4.0 V
16 −4.5 V
14
12 −10 V
10
8
6
ID = −6.5A
4
−50 0 50 100 150
Tch - Channel Temperature - ˚C
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
1 000
100
Ciss
Coss
Crss
VGS = 0 V
f = 1 MHz
−0.1 −1 −10
VDS - Drain to Source Voltage - V
−100
REVERSE RECOVERY TIME vs.
DIODE CURRENT
di/dt = 100 A/ µs
VGS = 0 V
100
10
−0.1
−1
−10 −100
IF - Diode Current - A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100 Pulsed
10
VGS = −4.0 V
1
0V
0.1
0.01
0.001
0.00
0.50
1.00
VSD - Source to Drain Voltage - V
1.50
1 000
100
SWITCHING CHARACTERISTICS
td(off)
tf
tr
td(on)
10
1
−0.1
VDS = −15 V
VGS = −10 V
RG = 10Ω
−1 −10 −100
ID - Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
−40
ID = −13.0 A
−30
VDS = −24 V
VGS
−15 V
−20 −6 V
−10
VDS
0 10 20 30 40 50 60 70
QG - Gate Charge - nC
−12
−10
−8
−6
−4
−2
0
Data Sheet G14284EJ1V0DS00
5
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet UPA1730.PDF ] |
Número de pieza | Descripción | Fabricantes |
UPA1730 | SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE | NEC |
UPA1731 | SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE | NEC |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |