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UPA1731 데이터시트 PDF




NEC에서 제조한 전자 부품 UPA1731은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

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부품번호 UPA1731 기능
기능 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
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UPA1731 데이터시트, 핀배열, 회로
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µPA1731
SWITCHING
P-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The µPA1731 is P-Channel MOS Field Effect Transistor
designed for power management applications of
notebook computers and Li-ion battery protection circuit.
FEATURES
Low on-resistance
RDS(on)1 = 10.3 mTYP. (VGS = –10 V, ID = –5.0 A)
RDS(on)2 = 14.6 mTYP. (VGS = –4.5 V, ID = –5.0 A)
RDS(on)3 = 16.5 mTYP. (VGS = –4.0 V, ID = –5.0 A)
Low Ciss : Ciss =2600 pF TYP.
Built-in G-S protection diode
Small and surface mount package (Power SOP8)
PACKAGE DRAWING (Unit : mm)
85
1,2,3 ; Source
4 ; Gate
5,6,7,8 ; Drain
14
5.37 MAX.
6.0 ±0.3
4.4
0.8
1.27 0.78 MAX.
0.40
+0.10
–0.05
0.12 M
0.5 ±0.2
0.10
ORDERING INFORMATION
PART NUMBER
PACKAGE
µPA1731G
Power SOP8
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.)
Drain to Source Voltage (VGS = 0 V)
VDSS –30 V
Gate to Source Voltage (VDS = 0 V)
VGSS
# 20 V
Drain Current (DC)
Drain Current (pulse) Note1
Total Power Dissipation (TA = 25°C) Note2
ID(DC)
ID(pulse)
PT
# 10
# 40
2.0
A
A
W
Channel Temperature
Tch 150 °C
Storage Temperature
Tstg –55 to + 150 °C
Notes 1. PW 10 µs, Duty Cycle 1 %
2. Mounted on ceramic substrate of 1200 mm2 x 2.2 mm
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. G14285EJ1V0DS00 (1st edition)
Date Published October 1999 NS CP(K)
Printed in Japan
The mark shows major revised points.
©
1999




UPA1731 pdf, 반도체, 판매, 대치품
µPA1731
FORWARD TRANSFER CHARACTERISTICS
100 Pulsed
10
1
0.1
TA = 50˚C
25˚C
25˚C
75˚C
125˚C
150˚C
0.01
0.001
0.0001
0
1.0
2.0
VDS = 10 V
3.0
4.0
VGS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
TA = 50˚C
25˚C
25˚C
75˚C
125˚C
10 150˚C
1
0.1
1 10
ID- Drain Current - A
VDS = 10 V
Pulsed
100
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
20
Pulsed
VGS = 4.0 V
15 4.5 V
10 V
10
5
0
0.1
1
10
100
100
ID - Drain Current - A
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
50 Pulsed
40
VGS = 10 V
4.5 V 4.0 V
30
20
10
0
0.2
0.4
0.6
0.8
VDS - Drain to Source Voltage - V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
30 Pulsed
20
ID = 10 A
5.0 A
10
0 5 10 15
VGS - Gate to Source Voltage - V
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
2.0
VDS = 10 V
ID = 1 mA
1.5
1.0
0.5
0
50 0 50 100 150
Tch - Channel Temperature - ˚C
4 Data Sheet G14285EJ1V0DS00

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UPA1731 전자부품, 판매, 대치품
[MEMO]
µPA1731
Data Sheet G14285EJ1V0DS00
7

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