|
|
|
부품번호 | UPA1756 기능 |
|
|
기능 | SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE | ||
제조업체 | NEC | ||
로고 | |||
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA1756
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
This product is Dual N-Channel MOS Field Effect
Transistor designed for power management
application of notebook computers, and Li-ion
battery application.
FEATURES
• Dual MOS FET chips in small package
• 2.5-V gate drive type and low on-resistance
RDS(on)1 = 30 mΩ MAX. (VGS = 4.5 V, ID = 3.0 A)
RDS(on)2 = 40 mΩ MAX. (VGS = 2.5 V, ID = 3.0 A)
• Low Ciss Ciss = 800 pF TYP.
• Built-in G-S protection diode
• Small and surface mount package (Power SOP8)
ORDERING INFORMATION
PART NUMBER
µ PA1756G
PACKAGE
Power SOP8
PACKAGE DRAWING (Unit : mm)
85
14
5.37 Max.
1 ; Source 1
2 ; Gate 1
7, 8 ; Drain 1
3 ; Source 2
4 ; Gate 2
5, 6 ; Drain 2
6.0 ±0.3
4.4
1.27 0.78 Max.
0.40
+0.10
–0.05
0.12 M
0.5 ±0.2
0.8
0.10
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage (VGS = 0 V)
VDSS
20 V
Gate to Source Voltage (VDS = 0 V)
VGSS
±12.0
V
Drain Current (DC)
ID(DC)
±6.0 A
Drain Current (Pulse)Note1
ID(pulse)
±24 A
Total Power Dissipation (1 unit)Note2
PT
1.7 W
Total Power Dissipation (2 unit)Note2
PT
2.0 W
Channel Temperature
Tch 150 °C
Storage Temperature
Tstg −55 to +150 °C
Notes 1. PW ≤ 10 µ s, Duty Cycle ≤ 1 %
2. TA = 25 °C, Mounted on ceramic substrate of 2000 mm2 x 1.1 mm
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this
device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may
be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D12909EJ1V0DS00 (1st edition)
Date Published February 1999 NS CP (K)
Printed in Japan
©
1999
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
40 VGS=2.5V
VGS=4V
30
VGS=4.5V
20
10
0 ID= 3A
- 50 0 50 100 150
Tch - Channel Temperature -˚C
10 000
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VGS = 0 V
f = 1 MHz
1 000
100
Ciss
Coss
Crss
10
0.1
1 10
VDS - Drain to Source Voltage - V
100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
40 8
ID= 6A
30 6
20
VDD=16V
10V
4V
10
VGS
VDS
0 4 8 12
QG - Gate Charge - nC
4
2
0
16
µ PA1756
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
Pulsed
100
VGS=4V
10
VGS=2.5V
1
VGS=0V
0.1
0
0.5 1.0
VSD - Source to Drain Voltage - V
1.5
10 000
SWITCHING CHARACTERISTICS
1 000
100
10
0.1
td(off)
tf
tr
td(on)
VDD =10V
VGS(on) = 4V
RG =10Ω
1 10 100
ID - Drain Current - A
4 Data Sheet D12909EJ1V0DS00
4페이지 [MEMO]
µ PA1756
Data Sheet D12909EJ1V0DS00
7
7페이지 | |||
구 성 | 총 8 페이지수 | ||
다운로드 | [ UPA1756.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
UPA1755 | SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE | NEC |
UPA1756 | SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE | NEC |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |