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UPA1757 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 UPA1757
기능 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
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UPA1757 데이터시트, 핀배열, 회로
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA1757
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
Description
This product is Dual N-Channel MOS Field Effect Transistor
designed for power management application of
notebook computers, and Li-ion battery application.
Features
Dual MOS FET chips in small package
2.5 V gate drive type and low on-resistance
RDS(on)1 = 23 mΩ (MAX.) (VGS = 4.5 V, ID = 3.5 A)
RDS(on)2 = 32 mΩ (MAX.) (VGS = 2.5 V, ID = 3.5 A)
Low Ciss Ciss = 750 pF Typ.
Built-in G-S protection diode
Small and surface mount package
(Power SOP8)
Ordering information
Part Number
µ PA1757G
Package
Power SOP8
Package Drawing (Unit : mm)
85
14
5.37 Max.
1 ; Source 1
2 ; Gate 1
7, 8 ; Drain 1
3 ; Source 2
4 ; Gate 2
5, 6 ; Drain 2
6.0 ±0.3
4.4
1.27 0.78 Max.
0.40
+0.10
–0.05
0.12 M
0.5 ±0.2
0.8
0.10
Absolute Maximum Ratings (TA = 25 °C)
Drain to source voltage
VDSS
20 V
Gate to source voltage
VGSS
±12.0
V
Drain current (DC)
Drain current (pulse)Note1
Total power dissipation (1 unit)Note2
Total power dissipation (2 unit)Note2
ID(DC)
ID(pulse)
PT
PT
±7.0 A
±28 A
1.7 W
2.0 W
Channel temperature
Tch 150 °C
Storage temperature
Tstg 55 to +150 °C
Notes 1. PW 10 µ s, Duty Cycle 1 %
2. TA = 25 °C, Mounted on ceramic substrate of 2000 mm2 x 1.1 mm
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this
device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may
be applied to this device.
The information in this document is subject to change without notice.
Document No. D12910EJ2V0DS00 (2nd edition)
Date Published September 1998 NS CP (K)
Printed in Japan
© 1998




UPA1757 pdf, 반도체, 판매, 대치품
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
40
VGS=2.5V
30
20 VGS=4.5V
10
0 ID= 3.5A
- 50 0 50 100 150
Tch - Channel Temperature -˚C
10000
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VGS = 0
f = 1 MHz
1000
100
Ciss
Coss
Crss
10
0.1
1 10
VDS - Drain to Source Voltage - V
100
1 000
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
di/dt =100A/µ s
VGS = 0
100
10
1
0.1 1 10 100
IF - Diode Current - A
µ PA1757
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
Pulsed
100
VGS=2.5V
10
VGS=0
1
0.1
0
0.5 1.0
VSD - Source to Drain Voltage - V
1.5
1 000
100
SWITCHING CHARACTERISTICS
tr tf
td(off)
td(on)
10
1
0.1
VDD =10V
VGS(on) = 4V
RG =10
1 10 100
ID - Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
40 8
ID=7.0A
30
VDD=16V
VGS
6
10V
4V
20 4
10 2
VDS
0
0 4 8 12 16
QG - Gate Charge - nC
4

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UPA1757 전자부품, 판매, 대치품
[MEMO]
µ PA1757
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전력 반도체 판매 ( IGBT, TR 모듈, SCR, 다이오드 모듈 )

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