Datasheet.kr   

UPA1802 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 UPA1802
기능 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
제조업체 NEC
로고 NEC 로고 



전체 8 페이지

		

No Preview Available !

UPA1802 데이터시트, 핀배열, 회로
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA1802
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The µPA1802 is a switching device which can be
driven directly by a 2.5-V power source.
The µPA1802 features a low on-state resistance and
excellent switching characteristics, and is suitable for
applications such as power switch of portable machine
and so on.
8
PACKAGE DRAWING (Unit : mm)
5
1, 5, 8 : Drain
2, 3, 6, 7: Source
4 : Gate
1.2 MAX.
1.0±0.05
0.25
FEATURES
Can be driven by a 2.5-V power source
Low on-state resistance
RDS(on)1 = 23 mMAX. (VGS = 4.5 V, ID = 3.5 A)
RDS(on)2 = 25 mMAX. (VGS = 4.0 V, ID = 3.5 A)
RDS(on)3 = 32 mMAX. (VGS = 2.5 V, ID = 3.5 A)
14
3.15 ±0.15
3.0 ±0.1
ORDERING INFORMATION
PART NUMBER
PACKAGE
µPA1802GR-9JG
Power TSSOP8
0.65 0.8 MAX.
0.27
+0.03
–0.08
0.10 M
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage
VDSS 20 V
Gate to Source Voltage
VGSS ±12 V
Drain Current (DC)
Drain Current (pulse) Note1
Total Power Dissipation Note2
ID(DC)
ID(pulse)
PT
±7.0
±28
2.0
A
A
W
Channel Temperature
Tch 150 °C
Storage Temperature
Tstg –55 to +150 °C
3°
+5°
–3°
0.1±0.05
0.5
0.6
+0.15
–0.1
6.4 ±0.2
4.4 ±0.1
1.0 ±0.2
0.1
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Notes 1. PW 10 µs, Duty Cycle 1 %
2. Mounted on ceramic substrate of 5000 mm2 x 1.1 mm
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D12966EJ1V0DS00 (1st edition)
Date Published January 2000 NS CP(K)
Printed in Japan
The mark shows major revised points.
©
1997, 2000




UPA1802 pdf, 반도체, 판매, 대치품
µ PA1802
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
35
VGS = 2.5 V
30
TA = 125˚C
25
75˚C
20 25˚C
25˚C
15
10
0.1
1 10
ID - Drain Current - A
100
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
25
VGS = 4.5 V
20 TA = 125˚C
75˚C
15 25˚C
25˚C
10
5
0.1 1 10
ID - Drain Current - A
100
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
50
ID = 3.5 A
40
30
20
10
0 5 10 15
VGS - Gate to Source Voltage - V
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
25
VGS = 4.0 V
TA = 125˚C
20
75˚C
15 25˚C
25˚C
10
5
0.1 1 10
ID - Drain Current - A
100
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
35
ID = 3.5 A
30
VGS = 2.5 V
25
4.0 V
20
4.5 V
15
10
5
50 0
50 100 150
Tch - Channel Temperature - ˚C
10000
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
f = 1 MHz
VGS = 0 V
1000
100
Ciss
Coss
Crss
10
0.1
1 10
VDS - Drain Source Voltage - V
100
4 Data Sheet D12966EJ1V0DS00

4페이지










UPA1802 전자부품, 판매, 대치품
[MEMO]
µ PA1802
Data Sheet D12966EJ1V0DS00
7

7페이지



구       성총 8 페이지
다운로드[ UPA1802.PDF 데이터시트 ]
구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

전력 반도체 판매 ( IGBT, TR 모듈, SCR, 다이오드 모듈 )

휴대전화 : 010-3582-2743


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877, [ 홈페이지 ]



링크공유

링크 :

관련 데이터시트

부품번호상세설명 및 기능제조사
UPA1800

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

NEC
NEC
UPA1801

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

NEC
NEC

DataSheet.kr    |   2019   |  연락처   |  링크모음   |   검색  |   사이트맵