Datasheet.kr   

UPA1813 데이터시트 PDF




NEC에서 제조한 전자 부품 UPA1813은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 UPA1813 자료 제공

부품번호 UPA1813 기능
기능 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
제조업체 NEC
로고 NEC 로고


UPA1813 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




전체 8 페이지수

미리보기를 사용할 수 없습니다

UPA1813 데이터시트, 핀배열, 회로
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA1813
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The µPA1813 is a switching device which can be
driven directly by a 2.5-V power source.
The µPA1813 features a low on-state resistance and
excellent switching characteristics, and is suitable for
applications such as power switch of portable machine
and so on.
8
PACKAGE DRAWING (Unit : mm)
5
1, 5, 8 : Drain
2, 3, 6, 7: Source
4 : Gate
1.2 MAX.
1.0±0.05
0.25
FEATURES
Can be driven by a 2.5-V power source
Low on-state resistance
RDS(on)1 = 25 mMAX. (VGS = –4.5 V, ID = –2.5 A)
RDS(on)2 = 30 mMAX. (VGS = –4.0 V, ID = –2.5 A)
RDS(on)3 = 40 mMAX. (VGS = –2.5 V, ID = –2.5 A)
14
3.15 ±0.15
3.0 ±0.1
ORDERING INFORMATION
PART NUMBER
PACKAGE
µPA1813GR-9JG
Power TSSOP8
0.65 0.8 MAX.
0.27
+0.03
–0.08
0.10 M
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage
VDSS –12 V
Gate to Source Voltage
VGSS
–10/+5
V
Drain Current (DC)
Drain Current (pulse) Note1
Total Power Dissipation Note2
ID(DC)
ID(pulse)
PT
±5.0
±20
2.0
A
A
W
Channel Temperature
Tch 150 °C
Storage Temperature
Tstg –55 to +150 °C
3°
+5°
–3°
0.1±0.05
0.5
0.6
+0.15
–0.1
6.4 ±0.2
4.4 ±0.1
1.0 ±0.2
0.1
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Notes 1. PW 10 µs, Duty Cycle 1 %
2. Mounted on ceramic substrate of 5000 mm2 x 1.1 mm
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D13294EJ1V0DS00 (1st edition)
Date Published August 1999 NS CP(K)
Printed in Japan
©
1998, 1999




UPA1813 pdf, 반도체, 판매, 대치품
µ PA1813
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
50
VGS = 2.5 V
40
30
20
0.01
TA = 125˚C
75˚C
25˚C
25˚C
0.1 1
10
ID - Drain Current - A
100
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
30
VGS = 4.5 V
TA = 125˚C
75˚C
20 25˚C
25˚C
10
0.01
0.1 1
10
ID - Drain Current - A
100
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
50
ID = 2.5 A
40
30
20
10
0
2
4 6
8 10
VGS - Gate to Source Voltage - V
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
30
VGS = 4.0 V
TA = 125˚C
75˚C
25˚C
20
25˚C
10
0.01
0.1 1
10
ID - Drain Current - A
100
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
40
ID = 2.5 A
VGS = 2.5 V
35
30
4.0 V
25
4.5 V
20
15
10
50
0 50 100
Tch - Channel Temperature - ˚C
150
10000
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
f = 1 MHz
VGS = 0 V
1000
100
Ciss
Coss
Crss
10
1
10
VDS - Drain Source Voltage - V
100
4 Data Sheet D13294EJ1V0DS00

4페이지










UPA1813 전자부품, 판매, 대치품
[MEMO]
µ PA1813
Data Sheet D13294EJ1V0DS00
7

7페이지


구       성 총 8 페이지수
다운로드[ UPA1813.PDF 데이터시트 ]

당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는

포괄적인 데이터시트를 제공합니다.


구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한
광범위한 전력 반도체를 판매합니다.

전력 반도체 전문업체

상호 : 아이지 인터내셔날

사이트 방문 :     [ 홈페이지 ]     [ 블로그 1 ]     [ 블로그 2 ]



관련 데이터시트

부품번호상세설명 및 기능제조사
UPA1810

P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

NEC
NEC
UPA1811

P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

NEC
NEC

DataSheet.kr       |      2020   |     연락처      |     링크모음      |      검색     |      사이트맵