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UPA1911 데이터시트 PDF




NEC에서 제조한 전자 부품 UPA1911은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

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부품번호 UPA1911 기능
기능 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
제조업체 NEC
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UPA1911 데이터시트, 핀배열, 회로
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA1911
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The µPA1911 is a switching device which can be driven
directly by a 2.5-V power source.
The µPA1911 features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such
as power switch of portable machine and so on.
FEATURES
Can be driven by a 2.5-V power source
Low on-state resistance
RDS(on)1 = 115 mMAX. (VGS = –4.5 V, ID = –1.5 A)
RDS(on)2 = 120 mMAX. (VGS = –4.0 V, ID = –1.5 A)
RDS(on)3 = 190 mMAX. (VGS = –2.5 V, ID = –1.0A)
PACKAGE DRAWING (Unit : mm)
0.32
+0.1
–0.05
0.16+–00..016
65 4
12 3
0.95 0.95
1.9
2.9 ±0.2
0 to 0.1
0.65
0.9 to 1.1
ORDERING INFORMATION
PART NUMBER
PACKAGE
µPA1911TE
6-pin Mini Mold (Thin Type)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage
VDSS
–20
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse) Note1
VGSS
ID(DC)
ID(pulse)
–12/+6
# 2.5
# 10
Total Power Dissipation
Total Power Dissipation Note2
PT1 0.2
PT2 2
Channel Temperature
Tch 150
Storage Temperature
Tstg –55 to +150
V
V
A
A
W
W
°C
°C
1, 2, 5, 6 : Drain
3 : Gate
4 : Source
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Marking: TC
Notes 1. PW 10 µs, Duty Cycle 1 %
2. Mounted on FR-4 board, t 5 sec.
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D13455EJ1V0DS00 (1st edition)
Date Published September 1999 NS CP(K)
Printed in Japan
©
1998, 1999




UPA1911 pdf, 반도체, 판매, 대치품
µ PA1911
DRAIN TO SOURCE ON-STATE RESISTANCE Vs.
DRAIN CURRENT
350
VGS = 2.5 V
300
250
200 TA = 125 ˚C
75 ˚C
150 25 ˚C
100 25 ˚C
50
0
0.01
0.1 1
ID - Drain Current - A
10
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
200
VGS = −4.5 V
150
TA = 125 ˚C
100 75 ˚C
25 ˚C
25 ˚C
50
0
0.01
0.1 1
10
ID - Drain Current - A
100
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
200
ID = 1.5 A
150
100
50
0
0 2 4 6 8 10
VGS - Gate to Source Voltage - V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
250
VGS = 4.0 V
200
150
TA = 125 ˚C
75 ˚C
100 25 ˚C
25 ˚C
50
0
0.01
0.1 1
10
ID - Drain Current - A
100
DRAIN TO SOURCE ON STATE RESISTANCE vs.
CHANNEL TEMPERATURE
200
ID = 1.5 A
VGS = 2.5 V
150
4.0 V
100 4.5 V
50
0
50
1000
0 50 100
Tch - Channel Temperature -˚C
150
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
f = 1 MHz
Ciss VGS = 0 V
100
Coss
Crss
10
1
10
VDS - Drain to Source Voltage - V
100
4 Data Sheet D13455EJ1V0DS00

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UPA1911 전자부품, 판매, 대치품
[MEMO]
µ PA1911
Data Sheet D13455EJ1V0DS00
7

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