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UPA1912 데이터시트 PDF




NEC에서 제조한 전자 부품 UPA1912은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

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부품번호 UPA1912 기능
기능 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
제조업체 NEC
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UPA1912 데이터시트, 핀배열, 회로
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA1912
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The µPA1912 is a switching device which can be driven
directly by a 2.5-V power source.
The µPA1912 features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such
as power switch of portable machine and so on.
FEATURES
Can be driven by a 2.5-V power source
Low on-state resistance
RDS(on)1 = 50 mMAX. (VGS = –4.5 V, ID = –2.5 A)
RDS(on)2 = 52 mMAX. (VGS = –4.0 V, ID = –2.5 A)
RDS(on)3 = 70 mMAX. (VGS = –2.5 V, ID = –2.5 A)
ORDERING INFORMATION
PART NUMBER
PACKAGE
µPA1912TE
6-pin Mini Mold (Thin Type)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage
VDSS
–12
Gate to Source Voltage
VGSS
±10
Drain Current (DC)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
±4.5
±18
Total Power Dissipation
Total Power Dissipation Note2
PT1 0.2
PT2 2
Channel Temperature
Tch 150
Storage Temperature
Tstg –55 to +150
PACKAGE DRAWING (Unit : mm)
0.32
+0.1
–0.05
0.16+–00..016
65 4
12 3
0 to 0.1
0.95 0.95
1.9
2.9 ±0.2
0.65
0.9 to 1.1
1, 2, 5, 6 : Drain
3 : Gate
4 : Source
EQUIVALENT CIRCUIT
Drain
V Body
Gate
Diode
V
A Gate
Protection
A
Diode
Source
W Marking: TD
W
°C
°C
Notes 1. PW 10 µs, Duty Cycle 1 %
2. Mounted on FR-4 board, t 5 sec.
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D13806EJ2V0DS00 (2nd edition)
Date Published July 1999 NS CP(K)
Printed in Japan
The mark 5 shows major revised points.
©
1998, 1999




UPA1912 pdf, 반도체, 판매, 대치품
µ PA1912
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
120
VGS = 2.5 V
100
80
TA =125 °C
60 TA = 75 °C
TA = 25 °C
TA =25°C
40
0.01
0.1
1
10
ID - Drain Current - A
100
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
60 VGS = 4.5 V
50 TA =125 °C
TA = 75 °C
40 TA = 25 °C
TA =25°C
30
0.01
0.1
1
10
ID - Drain Current - A
100
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
100
ID = 2.5 A
80
60
40
20
0 2 4 6 8 10
VGS - Gate to Source Voltage - V
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
60 VGS = 4.0 V
TA =125 °C
50
TA = 75 °C
40 TA = 25 °C
TA =25°C
30
0.01
0.1 1 10
ID - Drain Current - A
100
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
70
ID = 2.5 A
60 VGS =2.5 V
VGS =4.0 V
50
VGS =4.5 V
40
30
50
0 50 100
Tch - Channel Temperature - °C
150
10000
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
f = 1 MHz
VGS = 0 V
1000
100
Ciss
Coss
Crss
10
0.1
1.0
10
VDS - Drain to Source Voltage - V
100
4 Data Sheet D13806EJ2V0DS00

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UPA1912 전자부품, 판매, 대치품
[MEMO]
µ PA1912
Data Sheet D13806EJ2V0DS00
7

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