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PDF PCF85102C-2P Data sheet ( Hoja de datos )

Número de pieza PCF85102C-2P
Descripción 256 x 8-bit CMOS EEPROMs with I2C-bus interface
Fabricantes NXP Semiconductors 
Logotipo NXP Semiconductors Logotipo



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No Preview Available ! PCF85102C-2P Hoja de datos, Descripción, Manual

INTEGRATED CIRCUITS
DATA SHEET
PCF85102C-2; PCF85103C-2
256 × 8-bit CMOS EEPROMs with
I2C-bus interface
Product specification
File under Integrated Circuits, IC12
2000 Feb 15

1 page




PCF85102C-2P pdf
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SCL
SDA
6
5
VDD
8
n
INPUT
FILTER
ADDRESS
SWITCH
SHIFT
REGISTER
I2C-BUS CONTROL LOGIC
BYTE
COUNTER
3
BYTE
LATCH
(8 bytes)
ADDRESS
HIGH
REGISTER
SEQUENCER
DIVIDER
( 128)
ADDRESS
POINTER
8
EEPROM
4
EE
CONTROL
A2 3
A1 2
1
A0
74
n.c. VSS
TEST MODE DECODER
POWER-ON-RESET
PCF85102C-2;
PCF85103C-2
The pin numbers in this block diagram refer to the PCF85102C-2.
For PCF85103C-2, please see Chapter 7.
Fig.1 Block diagram.
TIMER
( 16)
OSCILLATOR
MGL967

5 Page





PCF85102C-2P arduino
Philips Semiconductors
256 × 8-bit CMOS EEPROMs with
I2C-bus interface
Product specification
PCF85102C-2; PCF85103C-2
9 LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
VDD
VI
II
IO
Tstg
Tamb
supply voltage
input voltage on input pins
input current on input pins
output current
storage temperature
ambient temperature
CONDITIONS
Zi> 500
MIN.
0.3
VSS 0.8
65
40
MAX.
+6.5
+6.5
1
10
+150
+85
UNIT
V
V
mA
mA
°C
°C
10 CHARACTERISTICS
VDD = 2.5 to 6.0 V; VSS = 0 V; Tamb = 40 to +85 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
Supplies
VDD
IDDR
supply voltage
supply current read
IDDW
supply current E/W
IDDstb
standby supply current
SCL input (pin 6)
fSCL = 100 kHz
VDD = 2.5 V
VDD = 6.0 V
fSCL = 100 kHz
VDD = 2.5 V
VDD = 6.0 V
VDD = 2.5 V
VDD = 6.0 V
2.5
VIL LOW-level input voltage
VIH HIGH-level input voltage
ILIinput leakage current
fSCL clock frequency
Ci input capacitance
SDA input/output (pin 5)
VI = VDD or VSS
VI = VSS
0.8
0.7VDD
0
VIL LOW-level input voltage
VIH HIGH-level input voltage
VOL LOW-level output voltage
ILO output leakage current
Ci input capacitance
Data retention time
0.8
0.7VDD
IOL = 3 mA; VDD(min)
VOH = VDD
VI = VSS
tD(ret)
data retention time
Tamb = 55 °C
10
MAX.
UNIT
6.0 V
60 µA
200 µA
0.6 mA
2.0 mA
3.5 µA
10 µA
+0.3VDD
6.5
±1
100
7
V
V
µA
kHz
pF
+0.3VDD
6.5
0.4
1
7
V
V
V
µA
pF
years
2000 Feb 15
11

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