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PDF VTP8350 Data sheet ( Hoja de datos )
| Número de pieza | VTP8350 | |
| Descripción | VTP Process Photodiodes | |
| Fabricantes | PerkinElmer Optoelectronics | |
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VTP Process Photodiodes
VTP8350
PACKAGE DIMENSIONS inch (mm)
CASE 11 CERAMIC
CHIP ACTIVE AREA: .012 in2 (7.45 mm2)
PRODUCT DESCRIPTION
Planar silicon photodiode mounted on a two
lead ceramic substrate and coated with a thick
layer of clear epoxy. These diodes exhibit low
dark current under reverse bias and fast speed
of response.
ABSOLUTE MAXIMUM RATINGS
Storage Temperature:
Operating Temperature:
-20°C to 75°C
-20°C to 75°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTP curves, page 46)
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
ISC
TC ISC
VOC
TC VOC
ID
RSH
CJ
Re
SR
λrange
λp
VBR
θ1/2
NEP
D*
Short Circuit Current
ISC Temperature Coefficient
Open Circuit Voltage
VOC Temperature Coefficient
Dark Current
Shunt Resistance
Junction Capacitance
Responsivity
Sensitivity
Spectral Application Range
Spectral Response - Peak
Breakdown Voltage
Angular Resp. - 50% Resp. Pt.
Noise Equivalent Power
Specific Detectivity
H = 100 fc, 2850 K
2850 K
H = 100 fc, 2850 K
2850 K
H = 0, VR = 10 V
H = 0, V = 10 mV
H = 0, V = 3 V
940 nm
@ Peak
VTP8350
Min. Typ. Max.
65 80
.20
350
-2.0
30
100
50
.06
.55
400 1150
925
33 140
±60
1.8 x 10-13 (Typ.)
1.5 x 10 12 (Typ.)
UNITS
µA
%/°C
mV
mV/°C
nA
GΩ
pF
A/(W/cm2)
A/W
nm
nm
V
Degrees
W ⁄ Hz
cm Hz / W
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA
Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
61
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