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PDF VVZB135 Data sheet ( Hoja de datos )
| Número de pieza | VVZB135 | |
| Descripción | Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System | |
| Fabricantes | IXYS Corporation | |
| Logotipo |  |
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VVZB 135
Three Phase Rectifier Bridge
with IGBT and Fast Recovery Diode
for Braking System
VRRM = 1600 V
IdAVM = 135 A
V
RRM
V
1600
Type
VVZB 135-16 NO1
10
+
11 13
12
16 15 14
NTC
19
+
20
6+7 1
4+5
2+3
17
8+9 18 21+22
Symbol
Conditions
Maximum Ratings
VRRM
IdAVM
TC = 85°C; sinusoidal 120°
IFSM TVJ = 45°C; t = 10 ms; VR = 0 V
TVJ = 150°C; t = 10 ms; VR = 0 V
I2t TVJ = 45°C; t = 10 ms; VR = 0 V
TVJ = 150°C; t = 10 ms; VR = 0 V
Ptot TC = 25°C per diode
(di/dt)cr
TVJ = TVJM;
repetitive; IT = 150 A
f = 50 Hz; tP = 200 µs
VD = 2/3 VDRM;
IG = 0.45 A;
diG/dt = 0.45 A/µs
non repetitive; IT = Id(AV)/3
(dv/dt)cr
TVJ = TVJM; VDR = 2/3 VDRM;
RGK = ∞; method 1 (linear voltage rise)
PGM TVJ = TVJM; tP = 30 µs
IT = Id(AV)/3; tP = 300 µs
PGAVM
VCES
VGE
TVJ = 25°C to 150°C
Continuous
IC25 TC = 25°C; DC
IC80 TC = 80°C; DC
ICM tp = Pulse width limited by TVJM
Ptot TC = 25°C
VRRM
IFAV
IFRMS
IFRM
TC = 80°C; rectangular d = 0.5
TC = 80°C; rectangular d = 0.5
TC = 80°C; tP = 10 µs; f = 5 kHz
IFSM TVJ = 45°C; t = 10 ms
Ptot TC = 25°C
Data according to IEC 60747
1600
135
700
610
2450
1860
190
100
V
A
A
A
A
A
W
A/µs
500 A/µs
1000 V/µs
10
5
0.5
1200
± 20
95
67
100
380
1200
27
38
tbd
200
130
W
W
W
V
V
A
A
A
W
V
A
A
A
A
W
Features
• Soldering connections for PCB mounting
• Convenient package outline
• Thermistor
• Isolation voltage 2500 V~
Applications
• Drive Inverters with brake system
Advantages
• 2 functions in one package
• Easy to mount with two screws
• Suitable for wave soldering
• High temperature and power cycling
capability
IXYS reserves the right to change limits, test conditions and dimensions.
© 2004 IXYS All rights reserved
1-5
1 page  
150
A
120
IC
90
TVJ = 25°C
TVJ = 125°C
60
30
VGE = 15V
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 V 4.0
VCE
Fig. 9 Typ. output characteristics
9
mJ
Eoff
6
td(off)
900
ns
t
600
3
Eoff
VCE = 720 V
VGE = ±15 V
RG = 22 Ω
TVJ = 125°C
300
tf
00
0 20 40 60 80 100 A 120
IC
Fig. 11 Typ. turn off energy and switching
times versus collector current
1
K/W
0.1
ZthJC
0.01
diode
IGBT
0.001
single pulse
0.0001
0.00001 0.0001 0.001 0.01 0.1
1 s 10
t
Fig. 13 Typ. transient thermal impedance
90
A
IF
60
VVZB 135
TVJ = 125°C
30
TVJ = 25°C
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 V 3.5
VF
Fig. 10 Typ. forward characteristics of
free wheeling diode
10
mJ
Eoff 8
6
td(off)
1000
ns
800
t
600
4 Eoff
2
VCE = 720 V
VGE = ±15 V
IC = 50 A
TVJ = 125°C
400
200
0 tf 0
0 10 20 30 40 50 Ω 60
RG
Fig. 12 Typ. turn off energy and switching
times versus gate resistor
10000
Ω
R
1000
100
0
VVZB 135
25 50 75 100 125 °C 150
T
Fig. 14 Typ. thermistor resistance versus
temperature
IXYS reserves the right to change limits, test conditions and dimensions.
© 2004 IXYS All rights reserved
5-5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet VVZB135.PDF ] | |
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