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W27L010 데이터시트 PDF




Winbond에서 제조한 전자 부품 W27L010은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

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부품번호 W27L010 기능
기능 128K 8 ELECTRICALLY ERASABLE EPROM
제조업체 Winbond
로고 Winbond 로고


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W27L010 데이터시트, 핀배열, 회로
Preliminary W27L010
128K × 8 ELECTRICALLY ERASABLE EPROM
GENERAL DESCRIPTION
The W27L010 is a high speed, low power consumption Electrically Erasable and Programmable Read
Only Memory organized as 131072 × 8 bits. It requires only one supply in the range of 3.0V to 3.6V in
normal read mode. The W27L010 provides an electrical chip erase function.
FEATURES
High speed access time:
90/120 nS (max.)
Read operating current: 10 mA (max.)
Erase/Programming operating current:
30 mA (max.)
Standby current: 20 µA (max.)
Low voltage power supply range, 3.0V to 3.6V
+14V erase/+12V programming voltage
Fully static operation
All inputs and outputs directly TTL/CMOS
compatible
Three-state outputs
Available packages: 32-pin 600 mil DIP, 450
mil SOP and PLCC
PIN CONFIGURATIONS
Vpp
A16
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
Q0
Q1
Q2
GND
1
2
3
4
5
6
7
8 32-pin DIP
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
Vcc
PGM
NC
A14
A13
A8
A9
A11
OE
A10
CE
Q7
Q6
Q5
Q4
Q3
/
AAA V V P
111 p c GN
2 56 p c MC
432 1 33 3
A7 5
2 1 0 29
A6 6
28
A5 7
27
A4 8
26
A3 9 32-pin PLCC 25
A2 10
24
A1 11
23
A0 12 1 1 1 1 1 1 2 22
Q0 13 4 5 6 7 8 9 0 21
Q QGQ QQQ
1 2 N3 4 5 6
D
A14
A13
A8
A9
A11
OE
A10
CE
Q7
BLOCK DIAGRAM
PGM
CE
OE
CONTROL
OUTPUT
BUFFER
Q0
.
.
Q7
A0
.
DECODER
.
A16
VCC
GND
VPP
CORE
ARRAY
PIN DESCRIPTION
SYMBOL
A0A16
Q0Q7
CE
OE
PGM
VPP
VCC
GND
NC
DESCRIPTION
Address Inputs
Data Inputs/Outputs
Chip Enable
Output Enable
Program Enable
Program/Erase Supply Voltage
Power Supply
Ground
No Connection
Publication Release Date: February 1999
- 1 - Revision A1




W27L010 pdf, 반도체, 판매, 대치품
Preliminary W27L010
DC CHARACTERISTICS
Absolute Maximum Ratings
PARAMETER
RATING
UNIT
Operation Temperature
Storage Temperature
Voltage on all Pins with Respect to Ground Except VCC, VPP
and A9 Pins
0 to +70
-65 to +125
-0.5 to VCC +0.5
°C
°C
V
Voltage on VCC Pin with Respect to Ground
-0.5 to +7
V
Voltage on VPP Pin with Respect to Ground
-0.5 to +14.5
V
Voltage on A9 Pin with Respect to Ground
-0.5 to +14.5
V
Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability of the
device.
DC Erase Characteristics
(TA = 25° C ±5° C, VCC = 5.0V ±10%, VHH = 14V)
PARAMETER
SYM.
CONDITIONS
LIMITS
UNIT
MIN. TYP. MAX.
Input Load Current
ILI VIN = VIL or VIH
-10 - 10 µA
VCC Erase Current
ICP CE = VIL, OE = VIH,
- - 30 mA
PGM = VIL, A9 = VHH
VPP Erase Current
IPP CE = VIL, OE = VIH,
- - 30 mA
PGM = VIL, A9 = VHH
Input Low Voltage
VIL
- -0.3 - 0.8 V
Input High Voltage
VIH
- 2.4 - 5.5 V
Output Low Voltage (Verify) VOL IOL = 2.1 mA
- - 0.45 V
Output High Voltage (Verify) VOH IOH = -0.4 mA
2.4 -
-V
A9 Erase Voltage
VID
- 13.25 14.0 14.25 V
VPP Erase Voltage
VPE
- 13.25 14.0 14.25 V
VCC Supply Voltage (Erase) VCE - 4.5 5.0 5.5 V
Note: VCC must be applied simultaneously or before VPP and removed simultaneously or after VPP.
-4-

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W27L010 전자부품, 판매, 대치품
Preliminary W27L010
DC PROGRAMMING CHARACTERISTICS
(VCC = 5.0V ±10%, TA = 25° C ±5° C)
PARAMETER
SYM.
CONDITIONS
Input Load Current
VCC Program Current
VPP Program Current
Input Low Voltage
Input High Voltage
Output Low Voltage (Verify)
Output High Voltage (Verify)
A9 Silicon I.D. Voltage
VPP Program Voltage
VCC Supply Voltage (Program)
ILI
ICP
IPP
VIL
VIH
VOL
VOH
VID
VPP
VCP
VIN = VIL or VIH
CE = VIL, OE = VIH,
PGM = VIL
CE = VIL, OE = VIH,
PGM = VIL
-
-
IOL = 2.1 mA
IOH = -0.4 mA
-
-
-
LIMITS
MIN. TYP. MAX.
- - 10
- - 30
UNIT
µA
mA
- - 30 mA
-0.3 - 0.8
2.4 - 5.5
- - 0.45
2.4 -
-
11.5 12.0 12.5
11.75 12.0 12.25
4.5 5.0 5.5
V
V
V
V
V
V
V
AC PROGRAMMING/ERASE CHARACTERISTICS
(VCC = 5.0V ±10%, TA = 25° C ±5° C)
PARAMETER
SYM.
LIMITS
MIN.
TYP.
VPP Setup Time
TVPS
2.0
-
Address Setup Time
TAS 2.0 -
Data Setup Time
TDS 2.0
-
PGM Program Pulse Width
TPWP
95
100
PGM Erase Pulse Width
TPWE
95
100
Data Hold Time
TDH 2.0
-
OE Setup Time
TOES
2.0
-
Data Valid from OE
TOEV
-
-
OE High to Output High Z
TDFP
0
-
Address Hold Time after PGM High
TAH 0
-
Address Hold Time (Erase)
TAHE
2.0
-
CE Setup Time
TCES
2.0
-
Note: VCC must be applied simultaneously or before VPP and removed simultaneously or after VPP.
MAX.
-
-
-
105
105
-
-
150
130
-
-
-
UNIT
µS
µS
µS
µS
mS
µS
µS
nS
nS
µS
µS
µS
Publication Release Date: February 1999
- 7 - Revision A1

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관련 데이터시트

부품번호상세설명 및 기능제조사
W27L010

128K 8 ELECTRICALLY ERASABLE EPROM

Winbond
Winbond

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