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WS27C010L-15DMB PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 WS27C010L-15DMB
기능 Military 128K x 8 CMOS EPROM
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WS27C010L-15DMB 데이터시트, 핀배열, 회로
WS27C010L
Military 128K x 8 CMOS EPROM
High Performance CMOS
— 90 ns Access Time
Fast Programming
EPI Processing
— Latch-Up Immunity to 200 mA
— ESD Protection Exceeds 2000 Volts
KEY FEATURES
DESC SMD No. 5962-89614
Compatible with JEDEC 27010 and
27C010 EPROMs
JEDEC Standard Pin Configuration
— 32 Pin CERDIP Package
— 32 Pin Leadless Chip Carrier (CLLCC)
GENERAL DESCRIPTION
The WS27C010L is a performance oriented 1 Meg UV Erasable Electrically Programmable Read Only Memory
organized as 128K words x 8 bits/word. It is manufactured using an advanced CMOS technology which enables it to
operate at data access times as fast as 120 nsecs. The memory was designed utilizing WSI's patented self-aligned
split gate EPROM cell, resulting in a low power device with a very cost effective die size.
The WS27C010L 1 Meg EPROM provides extensive code store capacity for microprocessor, DSP, and
microcontroller-based systems. Its 120 nsec access time over the full Military temperature range provides the
potential of no-wait state operation. And where this parameter is important, the WS27C010L provides the user with
a very fast 35 nsec TOE output enable time.
The WS27C010L is offered in both a 32 pin 600 mil CERDIP, and a 32 pad Ceramic Leadless Chip Carrier
(CLLCC) for surface mount applications. Its standard JEDEC EPROM pinouts provide for automatic upgrade
density paths for existing 128K and 256K EPROM users.
PIN CONFIGURATION
Chip Carrier
TOP VIEW
CERDIP
A7
4
5
3
2
1
32 31 30
29
A14
A6 6
28 A13
A5 7
27 A8
A4 8
26 A9
A3 9
25 A11
A2 10
24 OE
A1 11
23 A10
A0 12
22 CE
O0 13
21 O7
14 15 16 17 18 19 20
O1 O2 O3 O4 O5 O6
VPP
A16
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
O0
O1
O2
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32 VCC
31 PGM
30 NC
29 A14
28 A13
27 A8
26 A9
25 A11
24 OE
23 A10
22 CE
21 O7
20 O6
19 O5
18 O4
17 O3
PRODUCT SELECTION GUIDE
PARAMETER
Address Access Time (Max)
Chip Select Time (Max)
Output Enable Time (Max)
27C010L-90
90 ns
90 ns
35 ns
27C010L-12
120 ns
120 ns
35 ns
27C010L-15
150 ns
150 ns
40 ns
27C010L-17
170 ns
170 ns
40 ns
27C010L-20
200 ns
200 ns
40 ns
Return to Main Menu
4-25




WS27C010L-15DMB pdf, 반도체, 판매, 대치품
WS27C010L
PROGRAMMING INFORMATION
DC CHARACTERISTICS (TA = 25 ± 5°C, VCC = 6.25 ± 0.25 V, VPP = 12.75 ± 0.25 V. See Notes 8, 9 and 10)
SYMBOLS
PARAMETER
MIN
MAX
UNITS
ILI Input Leakage Current (VIN = VCC or Gnd)
–10 10 µA
IPP
VPP Supply Current During
Programming Pulse (CE = PGM = VIL)
60 mA
ICC VCC Supply Current
50 mA
VIL Input Low Voltage
–0.1
0.8
V
VIH Input High Voltage
2.0 VCC + 0.3
V
VOL Output Low Voltage During Verify (IOL = 2.1 mA)
0.4 V
VOH Output High Voltage During Verify (IOH = –400 µA) 3.5
V
NOTES: 8. VCC must be applied either coincidentally or before VPP and removed either coincidentally or after VPP.
9. VPP must not be greater than 14 volts including overshoot. During CE = PGM = VIL, VPP must not be switched from 5 volts
to 12.75 volts or vice-versa.
10. During power up the PGM pin must be brought high (VIH) either coincident with or before power is applied to VPP.
AC CHARACTERISTICS (TA = 25 ± 5°C, VCC = 6.25 ± 0.25 V, VPP = 12.75 ± 0.25 V)
SYMBOLS
PARAMETER
MIN TYP MAX
UNITS
tAS Address Setup Time
2
µs
tOES Output Enable Setup Time
2
µs
tOS Data Setup Time
2
µs
tAH Address Hold Time
0
µs
tOH Data Hold Time
2
µs
tDF
Chip Disable to Output Float Delay
0
55 ns
tOE Data Valid From Output Enable
55 ns
tVS/tCES
VPP Setup Time/CE Setup Time
2
µs
tPW PGM Pulse Width
0.1 3
4 ms
PROGRAMMING WAVEFORM
4-28
ADDRESSES
DATA
VPP
CE
PGM
VPP
VCC
VIH
VIL
VIH
VIL
VIH
OE
VIL
ADDRESS STABLE
tAS
DATA IN STABLE
HIGH Z
tOS tOH tOE
tAH
DATA OUT
VALID
tDF
tVS
tCES
tPW tOES

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부품번호상세설명 및 기능제조사
WS27C010L-15DMB

Military 128K x 8 CMOS EPROM

STMicroelectronics
STMicroelectronics

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