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WS57C191C-45DI 데이터시트 PDF




STMicroelectronics에서 제조한 전자 부품 WS57C191C-45DI은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

PDF 형식의 WS57C191C-45DI 자료 제공

부품번호 WS57C191C-45DI 기능
기능 HIGH SPEED 2K x 8 CMOS PROM/RPROM
제조업체 STMicroelectronics
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WS57C191C-45DI 데이터시트, 핀배열, 회로
WS57C191C/291C
HIGH SPEED 2K x 8 CMOS PROM/RPROM
KEY FEATURES
Ultra-Fast Access Time
— tACC = 25 ns
— tCS = 12 ns
Low Power Consumption
Fast Programming
Available in 300 Mil DIP and PLDCC
Pin Compatible with Am27S191/291
and N82S191 Bipolar PROMs
Immune to Latch-UP
— Up to 200 mA
ESD Protection Exceeds 2000V
GENERAL DESCRIPTION
The WS57C191C/291C is an extremely High Performance 16K UV Erasable Electrically Re-Programmable Read
Only Memory (RPROM). It is manufactured in an advanced CMOS technology which enables it to operate at Bipolar
PROM speeds while consuming only 25% of the power required by its Bipolar counterparts. The WS57C191C/291C
is also configured in the standard Bipolar PROM pinout which provides an easy upgrade path for systems which are
currently using Bipolar PROMs.
The WS57C191C is packaged in a conventional 600 mil DIP package as well as a Plastic Leaded Chip Carrier
(PLDCC) and a Ceramic Leadless Chip Carrier (CLLCC). The WS57C291C is packaged in a space saving 300 mil
DIP package configuration. Both are available in commercial, industrial, and military operating temperature ranges.
BLOCK DIAGRAM
6
A5 - A10
ROW
ADDRESSES
ROW
DECODER
EPROM ARRAY
16,384 BITS
5
A0 - A4
COLUMN
ADDRESSES
CS1/ VPP
CS2
CS3
COLUMN
DECODER
SENSE
AMPLIFIERS
8
OUTPUTS
PIN CONFIGURATION
TOP VIEW
Chip Carrier
CERDIP/Plastic DIP
NC
A5 A6 A7 VCC A8 A9
A7 1
A4
4
5
3
2
1
28 27 26
25
A10
A6 2
A5 3
A3 6
A2 7
24
23
CS1/VPP
CS2
A4
A3
4
5
A1 8
22 CS3
A0 9
21 NC
NC 10
20 O7
O0 11
19 O6
12 13 14 15 16 17 18
A2 6
A1 7
A0 8
O0 9
O1 10
O2 11
O1 O2 NC O3 O4 O5
GND
GND 12
24 VCC
23 A8
22 A9
21 A10
20 CS1/VPP
19 CS2
18 CS3
17 O7
16 O6
15 O5
14 O4
13 O3
PRODUCT SELECTION GUIDE
PARAMETER
Address Access Time (Max)
CS to Output Valid Time (Max)
191C/291C-25
25 ns
12 ns
191C/291C-35
35 ns
20 ns
191C/291C-45
45 ns
20 ns
191C/291C-55
55 ns
20 ns
Return to Main Menu
2-7




WS57C191C-45DI pdf, 반도체, 판매, 대치품
WS57C191C/291C
CAPACITANCE(4) TA = 25°C, f = 1 MHz
SYMBOL
PARAMETER
CONDITIONS
CIN
COUT
CVPP
Input Capacitance
Output Capacitance
VPP Capacitance
VIN = 0V
VOUT = 0V
VPP = 0 V
NOTES: 4. This parameter is only sampled and is not 100% tested.
5.Typical values are for TA = 25°C and nominal supply voltages.
TYP (5)
4
8
18
MAX
6
12
25
UNITS
pF
pF
pF
TEST LOAD (High Impedance Test Systems)
A.C. TESTING INPUT/OUTPUT WAVEFORM
2.01 V
D.U.T.
98
30 pF
(INCLUDING SCOPE
AND JIG
CAPACITANCE)
3.0
1.5 TEST 1.5
POINTS
0.0
A.C. testing inputs are driven at 3.0 V for a logic "1" and 0.0 V for a
logic "0." Timing measurements are made at 1.5 V for input and
output transitions in both directions.
NOTE: 6. Provide adequate decoupling capacitance as close as possible to this device to achieve the published A.C. and D.C. parameters.
A 0.1 microfarad capacitor in parallel with a 0.01 microfarad capacitor connected between VCC and ground is recommended.
Inadequate decoupling may result in access time degradation or other transient performance failures.
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WS57C191C-45DI 전자부품, 판매, 대치품
WS57C191C/291C
ORDERING INFORMATION
PART NUMBER
SPEED
(ns)
WS57C191C
PACKAGE
TYPE
PACKAGE
DRAWING
OPERATING
TEMPERATURE
RANGE
WSI
MANUFACTURING
PROCEDURE
WS57C191C-25D
WS57C191C-25J
WS57C191C-25P
WS57C191C-35D
WS57C191C-35J
WS57C191C-35P
WS57C191C-45D
WS57C191C-45DI
WS57C191C-45DMB*
WS57C191C-45J
WS57C191C-45P
WS57C191C-55D
WS57C191C-55DMB*
25 24 Pin CERDIP, 0.6"
25 28 Pin PLDCC
25 24 Pin Plastic DIP, 0.6"
35 24 Pin CERDIP, 0.6"
35 28 Pin PLDCC
35 24 Pin Plastic DIP, 0.6"
45 24 Pin CERDIP, 0.6"
45 24 Pin CERDIP, 0.6"
45 24 Pin CERDIP, 0.6"
45 28 Pin PLDCC
45 24 Pin Plastic DIP, 0.6"
55 24 Pin CERDIP, 0.6"
55 24 Pin CERDIP, 0.6"
D1
J3
P2
D1
J3
P2
D1
D1
D1
J3
P2
D1
D1
Comm’l
Comm’l
Comm’l
Comm’l
Comm’l
Comm’l
Comm’l
Industrial
Military
Comm’l
Comm'l
Comm’l
Military
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
MIL-STD-883C
Standard
Standard
Standard
MIL-STD-883C
WS57C291C
WS57C291C-25S
WS57C291C-25T
WS57C291C-35S
WS57C291C-35T
WS57C291C-35TMB*
WS57C291C-45S
WS57C291C-45T
WS57C291C-45TI
WS57C291C-45TMB*
WS57C291C-55T
WS57C291C-55TMB*
25 24 Pin Plastic DIP, 0.3"
25 24 Pin CERDIP, 0.3"
35 24 Pin Plastic DIP, 0.3"
35 24 Pin CERDIP, 0.3"
35 24 Pin CERDIP, 0.3"
45 24 Pin Plastic DIP, 0.3"
45 24 Pin CERDIP, 0.3"
45 24 Pin CERDIP, 0.3"
45 24 Pin CERDIP, 0.3"
55 24 Pin CERDIP, 0.3"
55 24 Pin CERDIP, 0.3"
S1
T1
S1
T1
T1
S1
T1
T1
T1
T1
T1
Comm'l
Comm’l
Comm'l
Comm’l
Military
Comm'l
Comm'l
Industrial
Military
Comm’l
Military
Standard
Standard
Standard
Standard
MIL-STD-883C
Standard
Standard
Standard
MIL-STD-883C
Standard
MIL-STD-883C
NOTE: 9. The actual part marking will not include the initials "WS."
*SMD product. See section 4 for DESC SMD number.
PROGRAMMING/ALGORITHMS/ERASURE/PROGRAMMERS
The WS57C191C and WS57C291C are programmed using Algorithm D shown on page 5-9.
REFER TO
PAGE 5-1
Return to Main Menu
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부품번호상세설명 및 기능제조사
WS57C191C-45D

HIGH SPEED 2K x 8 CMOS PROM/RPROM

STMicroelectronics
STMicroelectronics
WS57C191C-45DI

HIGH SPEED 2K x 8 CMOS PROM/RPROM

STMicroelectronics
STMicroelectronics

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